Conductance quantization in mesoscopic graphene

Using a generalized Landauer approach we study the non-linear transport in mesoscopic graphene with zig-zag and armchair edges. We find that for clean systems, the low-bias low-temperature conductance, G, of an armchair edge system in quantized as G/t=4 n e^2/h, whereas for a zig-zag edge the quantization changes to G/t t=4(n+1/2)e^2/h, where t is the transmission probability and n is an integer. We also study the effects of a non-zero bias, temperature, and magnetic field on the conductance. The magnetic field dependence of the quantization plateaus in these systems is somewhat different from the one found in the two-dimensional electron gas due to a different Landau level quantization.Comment: 6 pages, 9 figures. Final version published in Physical Review

Coulomb Interactions and Ferromagnetism in Pure and Doped Graphene

We study the presence of ferromagnetism in the phase diagram of the two-dimensional honeycomb lattice close to half-filling (graphene) as a function of the strength of the Coulomb interaction and doping. We show that exchange interactions between Dirac fermions can stabilize a ferromagnetic phase at low doping when the coupling is sufficiently large. In clean systems, the zero temperature phase diagram shows both first order and second order transition lines and two distinct ferromagnetic phases: one phase with only one type of carriers (either electrons or holes) and another with two types of carriers (electrons and holes). Using the coherent phase approximation (CPA) we argue that disorder further stabilizes the ferromagnetic phase.Comment: 10 pages; published versio

Localized states at zigzag edges of bilayer graphene

We report the existence of zero energy surface states localized at zigzag edges of bilayer graphene. Working within the tight-binding approximation we derive the analytic solution for the wavefunctions of these peculiar surface states. It is shown that zero energy edge states in bilayer graphene can be divided into two families: (i) states living only on a single plane, equivalent to surface states in monolayer graphene; (ii) states with finite amplitude over the two layers, with an enhanced penetration into the bulk. The bulk and surface (edge) electronic structure of bilayer graphene nanoribbons is also studied, both in the absence and in the presence of a bias voltage between planes.Comment: 4 pages, 5 figure

Disorder Induced Localized States in Graphene

We consider the electronic structure near vacancies in the half-filled honeycomb lattice. It is shown that vacancies induce the formation of localized states. When particle-hole symmetry is broken, localized states become resonances close to the Fermi level. We also study the problem of a finite density of vacancies, obtaining the electronic density of states, and discussing the issue of electronic localization in these systems. Our results also have relevance for the problem of disorder in d-wave superconductors.Comment: Replaced with published version. 4 pages, 4 figures. Fig. 1 was revise

Electronic transport in graphene: A semi-classical approach including midgap states

Using the semi-classical Boltzmann theory, we calculate the conductivity as function of the carrier density. As usually, we include the scattering from charged impurities, but conclude that the estimated impurity density is too low in order to explain the experimentally observed mobilities. We thus propose an additional scattering mechanism involving midgap states which leads to a similar k-dependence of the relaxation time as charged impurities. The new scattering mechanism can account for the experimental findings such as the sublinear behavior of the conductivity versus gate voltage and the increase of the minimal conductivity for clean samples. We also discuss temperature dependent scattering due to acoustic phonons.Comment: 10 pages, 4 figure

Electronic states and Landau levels in graphene stacks

We analyze, within a minimal model that allows analytical calculations, the electronic structure and Landau levels of graphene multi-layers with different stacking orders. We find, among other results, that electrostatic effects can induce a strongly divergent density of states in bi- and tri-layers, reminiscent of one-dimensional systems. The density of states at the surface of semi-infinite stacks, on the other hand, may vanish at low energies, or show a band of surface states, depending on the stacking order

Voltage-driven quantum oscillations in graphene

We predict unusual (for non-relativistic quantum mechanics) electron states in graphene, which are localized within a finite-width potential barrier. The density of localized states in the sufficiently high and/or wide graphene barrier exhibits a number of singularities at certain values of the energy. Such singularities provide quantum oscillations of both the transport (e.g., conductivity) and thermodynamic properties of graphene - when increasing the barrier height and/or width, similarly to the well-known Shubnikov-de-Haas (SdH) oscillations of conductivity in pure metals. However, here the SdH-like oscillations are driven by an electric field instead of the usual magnetically-driven SdH-oscillations.Comment: 4 pages, 4 figure