1 research outputs found
Phosphorus donors in highly strained silicon
The hyperfine interaction of phosphorus donors in fully strained Si thin
films grown on virtual SiGe substrates with is
determined via electrically detected magnetic resonance. For highly strained
epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly
below the limit predicted by valley repopulation. Within a Green's function
approach, density functional theory (DFT) shows that the additional reduction
is caused by the volume increase of the unit cell and a local relaxation of the
Si ligands of the P donor.Comment: 12 pages, 3 figure