Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates

When lattice matched to GaN, the AlInN ternary alloy has a refractive index ~7% lower than that of GaN. This characteristic can be exploited to perform in situ reflectometry during epitaxial growth of GaN-based multilayer structures on free-standing GaN substrates, by insertion of a suitable Al0.82In0.18N layer. The real-time information on growth rates and cumulative layer thicknesses thus obtainable is particularly valuable in the growth of optical resonant cavity structures. We illustrate this capability with reference to the growth of InGaN/GaN multiple quantum-well structures, including a doubly periodic structure with relatively thick GaN spacer layers between groups of wells. Al0.82In0.18N insertion layers can also assist in the fabrication of resonant cavity structures in postgrowth processing, for example, acting as sacrificial layers in a lift-off process exploiting etch selectivity between Al0.82In0.18N and GaN

Control of edge bulge evolution during photoresist reflow and it's application to diamond micro-lens fabrication

We present an empirical study of profile evolution of lithographically defined photoresist (PR) patterns during thermal reflow and apply the findings to diamond micro-lens fabrication. During PR reflow, a bulge forms at the edge of the PR pattern and propagates inwards as the temperature and PR thickness are increased. An empirical relationship for this propagation is derived. Furthermore, it was found that at a certain reflow temperature and a limited pattern size, there is a minimum initial thickness of the PR pattern for forming spherical lens profiles. Based on these findings, diamond micro-lenses with a diameter of 400 µm and a previously unachieved radius of curvature of over 13 mm were fabricated. This is underpinned by forming PR micro-lens patterns with a large radius of curvature and transferring the PR patterns through low-selectivity Ar/Cl2 inductively coupled plasma etching

(In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

Comparable microcavities with 3/2 (~240 nm) active regions containing distributed (In,Ga)N quantum wells, grown on GaN substrates and bounded by two dielectric mirrors, have been fabricated by two different routes: one using laser lift-off to process structures grown on GaN-on-sapphire templates and the second using freestanding GaN substrates, which are initially processed by mechanical thinning. Both exploit the properties of an Al0.83In0.17N layer, lattice matched to the GaN substrate and spacer layers. In both cases cavity quality factors >400 are demonstrated by measurements of the cavity-filtered room-temperature excitonic emission near 410 nm

Concept of a GaN-LED-based positioning system using structured illumination

Accurate self-orientation within a space can be achieved using only a simple photodetector and a remote Gallium Nitride micro-light-emitting diode array, emitting a time series of varying spatial illumination patterns onto the scene

Structured illumination microscopy using micro-pixellated light-emitting diodes

Structured illumination is a flexible and economical method of obtaining optical sectioning in wide-field microscopy [1]. In this technique the illumination system is modified to project a single-spatial frequency grid pattern onto the sample [2, 3]. The pattern can only be resolved in the focal plane and by recording images for different transverse grid positions (or phases) an image of the in-focus parts of the object can be calculated. Light emitting diodes (LEDs) are becoming increasingly popular for lighting and illumination systems due to their low cost, small dimensions, low coherence, uniform illumination, high efficiency and long lifetime. These properties, together with recent developments in high brightness, ultraviolet operation and microstructured emitter design offer great potential for LEDs as light sources for microscopy. In this paper we demonstrate a novel structured illumination microscope using a blue micro-structured light emitting diode as the illumination source. The system is potentially very compact and has no-moving-parts

Positioning and space-division multiple access enabled by structured illumination with light-emitting diodes

Self-location of devices in an illuminated area can be realized using light-emitting diode array luminaires with integrated electronic smart control. These smart lighting sources project a rapidly displayed time sequence of spatial illumination patterns onto the scene, which enables positioning on a millisecond timescale. We demonstrate a prototype system based on a CMOS-driven 16×16 array of GaN light-emitting diodes and its application to space-division multiple access in a Gb/s optical wireless network

Hybrid integration of diamond membranes with GaN waveguides

The nitrogen vacancy (NV) is a photostable emitter in diamond which is optically accessible at room temperature and a potential candidate for quantum information processing as a spin register. The challenge facing research today is the efficient collection and manipulation of the NV’s emissions, such as by enhancing the zero phonon line transitions for a coherent spin-photon interface.Integrating diamond with other photonic materials would allow for resonant coupling of the defect centre to optical devices on large area photonic integrated circuits (PICs). Emitted photons collected by bus waveguides could then be guided elsewhere on chip for entanglement or measurements.This work focuses on integrating ultra-thin diamond membranes with GaN waveguide and resonator devices. Mode simulations (see Fig. 1(a)) show that light can be coupled significantly into and out of the membranes by this method. Membranes of < 200 nm have been fabricated using Ar-Cl2 etch recipes that cumulatively smooth the diamond over time; an r.m.s roughness value of 0.19 nm has been achieved.1 The smooth surface and ultra-low thickness allow a good conformation and strong bonding of the membrane to other materials. This should allow for the integration of diamond membranes with photonic integrated circuits as shown schematically in Fig. (b).Free standing ultra-thin diamond membranes can also be used in tuneable open access cavities – where a low mode volume and high Q factor are desired; 2 or as templates for fabricating diamond optical devices on non-native substrates.

Integrating diamond with GaN photonic device

The nitrogen vacancy is a photostable emitter in diamond which is optically accessible at room temperature and a potential candidate for quantum information processing as a spin register. The challenge facing research today is the efficient collection and manipulation of the NV’s emissions, such as enhancing the zero phonon line transitions for a coherent spin-photon interface. This project focuses on integrating ultra-thin diamond membranes with established photonic devices. By bonding the diamond to GaN, for example, mode simulations show that light can be coupled significantly into and out of the defect allowing processing across large area PICs

GaN directional couplers for integrated quantum photonics

Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip with 96% visibility.Comment: 4 pages, 5 figure

A Case History of Liquefaction Flow Failures in Mountains Mine Waste Dumps

Over the past 25 years there have been a large number of flowslides in Rocky Mountain coal mine waste dumps located in British Columbia, Canada. The flowslides occurred rapidly and displayed surprisingly long distance of runout up to 2 km. Detailed field, laboratory studies, and analyses indicate that static collapse of saturated or nearly saturated sandy gravel layers within the dumps are responsible for the initial failure and ensuing flow failures. In addition to field and laboratory studies, finite element analyses were carried out on three case histories. The analysis results indicated that the flow like liquefaction failures of these waste dumps can be triggered by gradually raising of perched water tables contained within thin layers or poorly draining waste material in these slopes. This paper reviews the site condition and failure pattern observed in the mountainous mine waste dumps and investigates the mechanism of static liquefaction failure by finite element methods