Biepitaxial Josephson junctions and SuFET technology for the preparation of HTS-JoFETs

Biepitaxial Josephson junctions and superconducting field effect transistors (SuFET) were fabricated in order to combine both techniques to a Josephson junction field effect transistor (JoFET). The Josephson junctions show RSJ-like behaviour. At 30 K a critical current density of Jc ≈ 104 A/cm2 and an IcRN-product of 0.1 mV were obtained. The oscillation of Shapiro steps with applied microwave field can be well fitted by the RSJ-model. SuFETs with CeO2 as dielectric show, for fixed charge transfer, results comparable to SrTiO3-based SuFETs. The downset of the resistive transition of a six-unit-cells thick YBa2Cu3O7-δ layer is 44 K and the largest field effect obtained so far is 1.5 %. Prelimary results on JoFETs show a drastic change in the critical current density and in the specific junction resistance, however the IcRN-product remains still in the typical range. The insulating properties are degraded compared to SuFETs

A-Si-Solarzellen im Hinblick auf kostenguenstige Fertigungsprozesse Schlussbericht. Abschlussdatum des Vorhabens: 31.12.1985

TIB: FR 546+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEDEGerman

HTSL-Bauelemente fuer schnelle analoge und digitale Signalverarbeitung Abschlussbericht

Available from TIB Hannover: F98B897 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman