Focused ion beam creation and templating of InAs and InAs/InP nanospikes

Ion beam irradiation has been examined as a method for creating nanoscale semiconductor pillar and cone structures, but has the drawback of inaccurate nanostructure placement. We report on a method for creating and templating nanoscale InAs spikes by focused ion beam (FIB) irradiation of both homoepitaxial InAs films and heteroepitaxial InAs on InP substrates. These 'nanospikes' are created as In droplets, formed due to FIB irradiation, act as etch masks for the underlying InAs. By pre-patterning the InAs to influence In droplet movement, nanospike locations on homoepitaxial InAs may be controlled with limited accuracy. Creating nanospikes using an InAs/InP heterostructure provides an additional measure of control over where the spikes form because nanospikes will not form on exposed regions of InP. This effect may be exploited to accurately control nanospike placement by pre-patterning an InAs/InP heterostructure to control the location of the InAs/InP interface. Using this heterostructure templating method it is possible to accurately place nanospikes into regular arrays that may be useful for a variety of applications.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/90790/1/0957-4484_22_35_355302.pd

Mechanisms of nanodot formation under focused ion beam irradiation in compound semiconductors

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/98704/1/JApplPhys_109_014319.pd

Electrical transport in ion beam created InAs nanospikes

Ion beam irradiation has previously been demonstrated as a method for creating nanowire-like semiconductor nanostructures, but no previous studies have reported on the electrical properties of those structures. In this work we describe the creation and in situ transmission electron microscopy electrical characterization of nanoscale InAs spike structures on both InAs and InP substrates fabricated using a focused ion beam erosion method. Those InAs ‘nanospikes’ are found to possess internal structures with varying amounts of ion damaged and single crystalline material. Nanospike electrical behavior is analyzed with respect to model electronic structures and is similar to cases of barrier limited conduction in nanowires. The different electrical responses of each nanospike are found to be the result of variation in their structure, with the conductivity of InAs nanospikes formed on InAs substrates found to increase with the degree of nanospike core crystallinity. The conductivity of InAs nanospikes formed on InP substrates does not show a dependence on core crystallinity, and may be controlled by the other internal barriers to conduction inherent in that system.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/98603/1/0957-4484_23_31_315301.pd

Protective effects of antiâ C5a peptide antibodies in experimental sepsis

We evaluated antibodies to different peptide regions of rat C5a in the sepsis model of cecal ligation and puncture (CLP) for their protective effects in rats. Rabbit polyclonal antibodies were developed to the following peptide regions of rat C5a: aminoâ terminal region (A), residues 1â 16; middle region (M), residues 17â 36; and the carboxylâ terminal region (C), residues 58â 77. With rat neutrophils, the chemotactic activity of rat C5a was significantly inhibited by antibodies with the following rank order: antiâ C > antiâ M â « antiâ A. In vivo, antibodies to the M and C (but not A) regions of C5a were protective in experimental sepsis, as determined by survival over a 10â day period, in a doseâ dependent manner. The relative protective efficacies of antiâ C5a preparations (in descending order of efficacy) were antiâ C â ¥ antiâ M â « antiâ A. In CLP rats, a delay in infusion of antibodies, which were injected at 6 or 12 h after CLP, still resulted in significant improvement in survival rates. These in vivo and in vitro data suggest that there are optimal targets on C5a for blockade during sepsis and that delayed infusion of antiâ C5a antibody until after onset of clinical evidence of sepsis still provides protective effects.Peer Reviewedhttps://deepblue.lib.umich.edu/bitstream/2027.42/154417/1/fsb2fj000653fje-sup-0001.pdfhttps://deepblue.lib.umich.edu/bitstream/2027.42/154417/2/fsb2fj000653fje.pdfhttps://deepblue.lib.umich.edu/bitstream/2027.42/154417/3/fsb2fj000653fje-sup-0002.pd

Applying the ALARA concept to the evaluation of vesicoureteric reflux

The voiding cystourethrogram (VCUG) is a widely used study to define lower urinary tract anatomy and to diagnose vesicoureteric reflux (VUR) in children. We examine the technical advances in the VCUG and other examinations for reflux that have reduced radiation exposure of children, and we give recommendations for the use of imaging studies in four groups of children: (1) children with urinary tract infection, (2) siblings of patients with VUR, (3) infants with antenatal hydronephrosis (ANH), and (4) children with a solitary functioning kidney. By performing examinations with little to no radiation, carefully selecting only the children who need imaging studies and judiciously timing follow-up examinations, we can reduce the radiation exposure of children being studied for reflux