61 research outputs found

    Laser-beam annealing of heavily damaged implanted layers on silicon

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    INTERACTION BETWEEN ARGON AND DOPANTS IN SPUTTERED a-Si : H

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    The concentrations of As, B, H, Ar and Si in sputtered a-Si : H are measured by helium Rutherford backscattering and nuclear reactions analysis. Excess or deficit of hydrogen and argon by comparison with intrinsic a-Si : H are found in presence of dopants at high deposition rate. This is related to the plasma deposition method and would suggest micro grain structure in the deposited layer
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