5 research outputs found
Modeling Single Electron Transfer in Si:P Double Quantum Dots
Solid-state systems such as P donors in Si have considerable potential for
realization of scalable quantum computation. Recent experimental work in this
area has focused on implanted Si:P double quantum dots (DQDs) that represent a
preliminary step towards the realization of single donor charge-based qubits.
This paper focuses on the techniques involved in analyzing the charge transfer
within such DQD devices and understanding the impact of fabrication parameters
on this process. We show that misalignment between the buried dots and surface
gates affects the charge transfer behavior and identify some of the challenges
posed by reducing the size of the metallic dot to the few donor regime.Comment: 11 pages, 7 figures, submitted to Nanotechnolog