55 research outputs found
Disorder suppression and precise conductance quantization in constrictions of PbTe quantum wells
Conductance quantization was measured in submicron constrictions of PbTe,
patterned into narrow,12 nm wide quantum wells deposited between
PbEuTe barriers. Because the quantum confinement imposed by
the barriers is much stronger than the lateral one, the one-dimensional
electron energy level structure is very similar to that usually met in
constrictions of AlGaAs/GaAs heterostructures. However, in contrast to any
other system studied so far, we observe precise conductance quantization in
units, {\it despite of significant amount of charged defects in the
vicinity of the constriction}. We show that such extraordinary results is a
consequence of the paraelectric properties of PbTe, namely, the suppression of
long-range tails of the Coulomb potentials due to the huge dielectric constant.Comment: 7 pages, 6 figures, submitted to Phys. Rev.
Conductance Fluctuations in PbTe Wide Parabolic Quantum Wells
We report on conductance fluctuations which are observed in local and
non-local magnetotransport experiments. Although the Hall bar samples are of
macroscopic size, the amplitude of the fluctuations from the local measurements
is close to e^2/h. It is shown that the fluctuations have to be attributed to
edge channel effects.Comment: postscript file including 3 figs, 3 pages, Paper presented at 3rd
Int. Symposium on "New Phenomena in Mesoscopic Structures" in Maui, Hawaii
199
Nonlocal resistance and its fluctuations in microstructures of band-inverted HgTe/(Hg,Cd)Te quantum wells
We investigate experimentally transport in gated microsctructures containing
a band-inverted HgTe/Hg_{0.3}Cd_{0.7}Te quantum well. Measurements of nonlocal
resistances using many contacts prove that in the depletion regime the current
is carried by the edge channels, as expected for a two-dimensional topological
insulator. However, high and non-quantized values of channel resistances show
that the topological protection length (i.e. the distance on which the carriers
in helical edge channels propagate without backscattering) is much shorter than
the channel length, which is ~100 micrometers. The weak temperature dependence
of the resistance and the presence of temperature dependent reproducible
quasi-periodic resistance fluctuations can be qualitatively explained by the
presence of charge puddles in the well, to which the electrons from the edge
channels are tunnel-coupled.Comment: 8 pages, 4 figures, published versio
Ising Quantum Hall Ferromagnet in Magnetically Doped Quantum Wells
We report on the observation of the Ising quantum Hall ferromagnet with Curie
temperature as high as 2 K in a modulation-doped (Cd,Mn)Te
heterostructure. In this system field-induced crossing of Landau levels occurs
due to the giant spin-splitting effect. Magnetoresistance data, collected over
a wide range of temperatures, magnetic fields, tilt angles, and electron
densities, are discussed taking into account both Coulomb electron-electron
interactions and sd coupling to Mn spin fluctuations. The critical behavior
of the resistance ``spikes'' at corroborates theoretical
suggestions that the ferromagnet is destroyed by domain excitations.Comment: revised, 4 pages, 4 figure
Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films
Effects of spin-orbit coupling and s-d exchange interaction are probed by
magnetoresistance measurements carried out down to 50 mK on ZnO and
Zn_{1-x}Mn_{x}O with x = 3 and 7%. The films were obtained by laser ablation
and doped with Al to electron concentration ~10^{20} cm^{-3}. A quantitative
description of the data for ZnO:Al in terms of weak-localization theory makes
it possible to determine the coupling constant \lambda_{so} = (4.4 +-
0.4)*10^{-11} eVcm of the kp hamiltonian for the wurzite structure, H_{so} =
\lambda_{so}*c(s x k). A complex and large magnetoresistance of
Zn_{1-x}Mn_{x}O:Al is interpreted in terms of the influence of the s-d
spin-splitting and magnetic polaron formation on the disorder-modified
electron-electron interactions. It is suggested that the proposed model
explains the origin of magnetoresistance observed recently in many magnetic
oxide systems.Comment: 4 pages, 4 figure
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