128 research outputs found
Pairing of Parafermions of Order 2: Seniority Model
As generalizations of the fermion seniority model, four multi-mode
Hamiltonians are considered to investigate some of the consequences of the
pairing of parafermions of order two. 2-particle and 4-particle states are
explicitly constructed for H_A = - G A^+ A with A^+}= 1/2 Sum c_{m}^+ c_{-m}^+
and the distinct H_C = - G C^+ C with C^+}= 1/2 Sum c_{-m}^+ c_{m}^+, and for
the time-reversal invariant H_(-)= -G (A^+ - C^+)(A-C) and H_(+) = -G
(A^+dagger + C^+)(A+C), which has no analogue in the fermion case. The spectra
and degeneracies are compared with those of the usual fermion seniority model.Comment: 18 pages, no figures, no macro
On Infinite Quon Statistics and "Ambiguous" Statistics
We critically examine a recent suggestion that "ambiguous" statistics is
equivalent to infinite quon statistics and that it describes a dilute,
nonrelativistics ideal gas of extremal black holes. We show that these two
types of statistics are different and that the description of extremal black
holes in terms of "ambiguous" statistics cannot be applied.Comment: Latex, 9 pages, no figures, to appear in Mod.Phys.Lett.
Strong decays of radially excited mesons in a chiral approach
We study radial excitations of pseudoscalar and vector (q bar q) mesons
within a chiral approach. We derive a general form for a chiral Lagrangian
describing processes involving excited pseudoscalar and vector mesons. The
parameters of the chiral Lagrangian are fitted using data and previous
calculations in the framework of the 3P0 model. Finite-width effects are
examined and predictions for mesons previously not discussed are given.
Available experimental data is analyzed whenever possible. Possible hints for
exotic mesons and open interpretation-issues are discussed.Comment: 16 page
Spatial-distribution of recombination centers in gaaste - effects of the doping level
The distribution in liquid-encapsulated-Czochralski (LEC) GaAs:Te wafers of point and complex defects has been investigated together with their influence on the minority-carrier diffusion length L. Three wafers with different Te-doping concentration (2.2 X 10(17), 4.5 X 10(17), and 1.5 X 10(18) cm-3) have been studied by means of the electron-beam-induced-current (EBIC) mode of scanning electron microscopy and of the surface photovoltage (SPV) method. The morphology and electrical activity of the defects observed across each wafer have been correlated to the formation and distribution of deep electronic levels, which are significantly affected by the tellurium concentration. The diffusion length has been found to be mainly controlled by deep levels associated with dislocations. EBIC localized measurements of L and of the net ionized free-carrier concentration provide evidence for the influence of Te concentration on impurity segregation at complex defects
Where is the pseudoscalar glueball ?
The pseudoscalar mesons with the masses higher than 1 GeV are assumed to
belong to the meson decuplet including the glueball as the basis state
supplementing the standard nonet of light states
. The decuplet is investigated by means of an algebraic approach based
on hypothesis of vanishing the exotic commutators of "charges" and
their time derivatives. These commutators result in a system of equations
determining contents of the isoscalar octet state in the physical isoscalar
mesons as well as the mass formula including all masses of the decuplet:
, K(1460), , and . The physical
isoscalar mesons , are expressed as superpositions of the "ideal"
states ( and ) and the glueball with the mixing
coefficient matrix following from the exotic commutator restrictions. Among
four one-parameter families of the calculated mixing matrix (numerous solutions
result from bad quality of data on the and K(1460) masses) there is
one family attributing the glueball-dominant composition to the
meson. Similarity between the pseudoscalar and scalar decuplets, analogy
between the whole spectra of the and mesons and affinity of
the glueball with excited states are also noticed.Comment: 18 pp., 2. figs., 2 tabs.; Published version. One of the authors
withdraws his nam
Quantization of the Hall conductivity well beyond the adiabatic limit in pulsed magnetic fields
We measure the Hall conductivity, , on a Corbino geometry sample
of a high-mobility AlGaAs/GaAs heterostructure in a pulsed magnetic field. At a
bath temperature about 80 mK, we observe well expressed plateaux in
at integer filling factors. In the pulsed magnetic field, the
Laughlin condition of the phase coherence of the electron wave functions is
strongly violated and, hence, is not crucial for quantization.Comment: 4 pages, 4 figures, submitted to PR
Probing Noise in Flux Qubits via Macroscopic Resonant Tunneling
Macroscopic resonant tunneling between the two lowest lying states of a
bistable RF-SQUID is used to characterize noise in a flux qubit. Measurements
of the incoherent decay rate as a function of flux bias revealed a Gaussian
shaped profile that is not peaked at the resonance point, but is shifted to a
bias at which the initial well is higher than the target well. The r.m.s.
amplitude of the noise, which is proportional to the decoherence rate 1/T_2^*,
was observed to be weakly dependent on temperature below 70 mK. Analysis of
these results indicates that the dominant source of low frequency (1/f) flux
noise in this device is a quantum mechanical environment in thermal
equilibrium.Comment: 4 pages 4 figure
Gallium transformation under femtosecond laser excitation: Phase coexistence and incomplete melting
The reversible phase transition induced by femtosecond laser excitation of
Gallium has been studied by measuring the dielectric function at 775 nm with ~
200 fs temporal resolution. The real and imaginary parts of the transient
dielectric function were calculated from absolute reflectivity of Gallium layer
measured at two different angles of incidence, using Fresnel formulas. The
time-dependent electron-phonon effective collision frequency, the heat
conduction coefficient and the volume fraction of a new phase were restored
directly from the experimental data, and the time and space dependent electron
and lattice temperatures in the layer undergoing phase transition were
reconstructed without ad hoc assumptions. We converted the temporal dependence
of the electron-phonon collision rate into the temperature dependence, and
demonstrated, for the first time, that the electron-phonon collision rate has a
non-linear character. This temperature dependence converges into the known
equilibrium function during the cooling stage. The maximum fraction of a new
phase in the laser-excited Gallium layer reached only 60% even when the
deposited energy was two times the equilibrium enthalpy of melting. We have
also demonstrated that the phase transition pace and a fraction of the
transformed material depended strongly on the thickness of the laser-excited
Gallium layer, which was of the order of several tens of nanometers for the
whole range of the pump laser fluencies up to the damage threshold. The
kinetics of the phase transformation after the laser excitation can be
understood on the basis of the classical theory of the first-order phase
transition while the duration of non-thermal stage appears to be comparable to
the sub-picosecond pulse length.Comment: 28 pages, including 9 figs. Submitted to Phys. Rev. B 14 March 200
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