An Advanced Real Time Lead RF-MEMS Based Switch Design for AI Applications

The artificial intelligence-based MEMS switch designs have been led technology in present micro-electronic applications. The 4G and 5G communication hardware networks have working been through RF-MEMS switches. The earlier MEMS deigns are outdated in terms of functionality and compatibility, so that a realistic RF-MEMS based advanced configurations are compulsory for future electronic applications. In this research work 2 different shunt-capacitive type configurations have been implemented and those are verified on COMSOL Multi-physics toolbox as well as functionality been verified on HFSS software tool. The electromechanical properties of proposed shunt type RF-MEMS switch attained more perfection in functionality compared to past configurations. The implemented switching model has uniform meandering and derives pull-in-voltage of 18.5v along with 1.2xs switching time. The 2nd type shunt RF-MEMS model has been generated pull-in-voltage of 25.5v and isolation loss of 37.20.  The performance metrics like Length 25.34 µm, Width 28.92 µm and Thickness 34.42 µm had been improved compared to previous models. The deigned shunt-capacitive type RF-MEMS models are most prominent in operation and offering advanced microelectronics applications

An Advanced Real Time Lead RF-MEMS Based Switch Design for AI Applications

The artificial intelligence-based MEMS switch designs have been led technology in present micro-electronic applications. The 4G and 5G communication hardware networks have working been through RF-MEMS switches. The earlier MEMS deigns are outdated in terms of functionality and compatibility, so that a realistic RF-MEMS based advanced configurations are compulsory for future electronic applications. In this research work 2 different shunt-capacitive type configurations have been implemented and those are verified on COMSOL Multi-physics toolbox as well as functionality been verified on HFSS software tool. The electromechanical properties of proposed shunt type RF-MEMS switch attained more perfection in functionality compared to past configurations. The implemented switching model has uniform meandering and derives pull-in-voltage of 18.5v along with 1.2xs switching time. The 2nd type shunt RF-MEMS model has been generated pull-in-voltage of 25.5v and isolation loss of 37.20.  The performance metrics like Length 25.34 µm, Width 28.92 µm and Thickness 34.42 µm had been improved compared to previous models. The deigned shunt-capacitive type RF-MEMS models are most prominent in operation and offering advanced microelectronics applications

Performance Comparison Of Shunt Rf Mems Switches

This is an attempt to compare three different shunt configured RF MEMS switches which offers a choice for applications in satellite and antennas. Advanced RF communication domain demands for design and modeling of RF MEMS switch which provides extremely reduced pull-in voltage, better isolation, low insertion loss, and with greater reliability. The proposed work manages with comparison of design modeling and performance of three different shunt configured RF MEMS switches. The proposed shunt configured RF MEMS switches are designed with different dimensions with different meandering techniques with perforations on beam structure helps in reducing the amount of voltage required for actuation of switch which is known as pull-in voltage. Comparative study of three different RF MEMS switches which involves in conducting electromechanical analysis are carried out using COMSOL multi physics tool and electromagnetic analysis are carried out using HFSS tool. Moreover the comparative study involves in comparing the values of pull-in voltage, switching time and capacitance, stress, insertion loss, return loss and isolation of three different RF MEMS switches. Proposed first switch model derives pull-in voltage of 16.9v with the switching time of 1.2µs, isolation of 47.70 dB at 5GHz and insertion loss of 0.0865 dB and return loss of 41.55 dB. Proposed second switch model derives pull-in voltage of 18.5v with the switching time of 2.5µs, isolation of 37.20 dB at 8GHz and insertion loss of 0.1177 dB and return loss of 38.60 dB. Proposed third switch model delivers pull-in voltage of 18.75v with the switching time of 2.56µs, isolation of 44.1552 dB at 8GHz and insertion loss of 0.0985 dB and return loss of 42.1004 dB

Design of a frequency selective surface with multiple four legged Slots

A design is presented for a triple band frequency selective surface (FSS) with triple-four-legged loaded slots elements. The resonant element considered is four legged loaded slot (FLLS). The frequency response curve of the FSS varies with respect to the scaling factors of the slots. An optimal scaling factor has been proposed for the slots such that it provides wide and multiple bands. These kinds of reflectors make structures low profile by providing the flexibility in mounting them closer to antenna without disturbing the impedance bandwidth and providing a good gain control in the main beam direction. Its frequency performance is obtained by using numerical simulation software HFSS based on finite-element method (FEM)