12,250 research outputs found
Fully electrically read-write device out of a ferromagnetic semiconductor
We report the realization of a read-write device out of the ferromagnetic
semiconductor (Ga,Mn)As as the first step to fundamentally new information
processing paradigm. Writing the magnetic state is achieved by current-induced
switching and read-out of the state is done by the means of the tunneling
anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device
can be used to design a electrically programmable memory and logic device.Comment: 4 pages, 4 figure
A class of quadratic deformations of Lie superalgebras
We study certain Z_2-graded, finite-dimensional polynomial algebras of degree
2 which are a special class of deformations of Lie superalgebras, which we call
quadratic Lie superalgebras. Starting from the formal definition, we discuss
the generalised Jacobi relations in the context of the Koszul property, and
give a proof of the PBW basis theorem. We give several concrete examples of
quadratic Lie superalgebras for low dimensional cases, and discuss aspects of
their structure constants for the `type I' class. We derive the equivalent of
the Kac module construction for typical and atypical modules, and a related
direct construction of irreducible modules due to Gould. We investigate in
detail one specific case, the quadratic generalisation gl_2(n/1) of the Lie
superalgebra sl(n/1). We formulate the general atypicality conditions at level
1, and present an analysis of zero-and one-step atypical modules for a certain
family of Kac modules.Comment: 26pp, LaTeX. Original title: "Finite dimensional quadratic Lie
superalgebras"; abstract re-worded; text clarified; 3 references added;
rearrangement of minor appendices into text; new subsection 4.
Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor
A novel magnetoresistance effect, due to the injection of a spin-polarized
electron current from a dilute magnetic into a non-magnetic semiconductor, is
presented. The effect results from the suppression of a spin channel in the
non-magnetic semiconductor and can theoretically yield a positive
magnetoresistance of 100%, when the spin flip length in the non-magnetic
semiconductor is sufficiently large. Experimentally, our devices exhibit up to
25% magnetoresistance.Comment: 3 figures, submitted for publicatio
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