Determining the electronic performance limitations in top-down fabricated Si nanowires with mean widths down to 4 nm

Silicon nanowires have been patterned with mean widths down to 4 nm using top-down lithography and dry etching. Performance-limiting scattering processes have been measured directly which provide new insight into the electronic conduction mechanisms within the nanowires. Results demonstrate a transition from 3-dimensional (3D) to 2D and then 1D as the nanowire mean widths are reduced from 12 to 4 nm. The importance of high quality surface passivation is demonstrated by a lack of significant donor deactivation, resulting in neutral impurity scattering ultimately limiting the electronic performance. The results indicate the important parameters requiring optimization when fabricating nanowires with atomic dimensions

Two-dimensional electrical characterization of ultrashallow source/drain extensions for nanoscale MOSFETs

Abstract State-of-the-art semiconductor devices require accurate control of the full two-dimensional dopant distribution. In this work, we report results obtained on 2D electrical characterization of ultra shallow junctions in Si using off axis electron holography to study two-dimensional effects on diffusion. In particular, the effect of a nitride diffusion mask on lateral diffusion of phosphorous is discussed. Retardation of lateral diffusion of P under the nitride diffusion mask is observed and compared to the lateral diffusion of P under an oxide diffusion mask. The ultra shallow junctions for the study were fabricated by a rapid thermal diffusion process from heavily P doped spin-on-dopants into a heavily B doped Si substrate. These shallow junctions are needed for fabricating source/drain extensions in nanoscale MOSFETs. One-dimensional electrical characterization of the junction was carried out to determine the electrical junction depth and compared to the metallurgical junction depth from SIMS analysis

Theory of Transmission through disordered superlattices

We derive a theory for transmission through disordered finite superlattices in which the interface roughness scattering is treated by disorder averaging. This procedure permits efficient calculation of the transmission thr ough samples with large cross-sections. These calculations can be performed utilizing either the Keldysh or the Landauer-B\"uttiker transmission formalisms, both of which yield identical equations. For energies close to the lowest miniband, we demonstrate the accuracy of the computationally efficient Wannier-function approximation. Our calculations indicate that the transmission is strongly affected by interface roughness and that information about scale and size of the imperfections can be obtained from transmission data.Comment: 12 pages, 6 Figures included into the text. Final version with minor changes. Accepted by Physical Review

Coherent phenomena in semiconductors

A review of coherent phenomena in photoexcited semiconductors is presented. In particular, two classes of phenomena are considered: On the one hand the role played by optically-induced phase coherence in the ultrafast spectroscopy of semiconductors; On the other hand the Coulomb-induced effects on the coherent optical response of low-dimensional structures. All the phenomena discussed in the paper are analyzed in terms of a theoretical framework based on the density-matrix formalism. Due to its generality, this quantum-kinetic approach allows a realistic description of coherent as well as incoherent, i.e. phase-breaking, processes, thus providing quantitative information on the coupled ---coherent vs. incoherent--- carrier dynamics in photoexcited semiconductors. The primary goal of the paper is to discuss the concept of quantum-mechanical phase coherence as well as its relevance and implications on semiconductor physics and technology. In particular, we will discuss the dominant role played by optically induced phase coherence on the process of carrier photogeneration and relaxation in bulk systems. We will then review typical field-induced coherent phenomena in semiconductor superlattices such as Bloch oscillations and Wannier-Stark localization. Finally, we will discuss the dominant role played by Coulomb correlation on the linear and non-linear optical spectra of realistic quantum-wire structures.Comment: Topical review in Semiconductor Science and Technology (in press) (Some of the figures are not available in electronic form

Ultrafast relaxation of photoexcited carriers in semiconductor quantum wires: A Monte Carlo approach

A detailed analysis of the cooling and thermalization process for photogenerated carriers in semiconductor quantum wires is presented. The energy relaxation of the nonequilibrium carrier distribution is investigated for the ‘‘realistic'' case of a rectangular multisubband quantum-wire structure. By means of a direct ensemble Monte Carlo simulation of both the carrier and the phonon dynamics, all the nonlinear phenomena relevant for the relaxation process, such as carrier-carrier interaction, hot-phonon effects, and degeneracy, are investigated. The results of these simulated experiments show a significant reduction of the carrier-relaxation process compared to the bulk case, which is mainly due to the reduced efficiency of carrier-carrier scattering; on the contrary, the role of hot-phonon effects and degeneracy seems to be not so different from that played in bulk semiconductors

Numerical study of the thermoelectric power factor in ultra-thin Si nanowires

Low dimensional structures have demonstrated improved thermoelectric (TE) performance because of a drastic reduction in their thermal conductivity, {\kappa}l. This has been observed for a variety of materials, even for traditionally poor thermoelectrics such as silicon. Other than the reduction in {\kappa}l, further improvements in the TE figure of merit ZT could potentially originate from the thermoelectric power factor. In this work, we couple the ballistic (Landauer) and diffusive linearized Boltzmann electron transport theory to the atomistic sp3d5s*-spin-orbit-coupled tight-binding (TB) electronic structure model. We calculate the room temperature electrical conductivity, Seebeck coefficient, and power factor of narrow 1D Si nanowires (NWs). We describe the numerical formulation of coupling TB to those transport formalisms, the approximations involved, and explain the differences in the conclusions obtained from each model. We investigate the effects of cross section size, transport orientation and confinement orientation, and the influence of the different scattering mechanisms. We show that such methodology can provide robust results for structures including thousands of atoms in the simulation domain and extending to length scales beyond 10nm, and point towards insightful design directions using the length scale and geometry as a design degree of freedom. We find that the effect of low dimensionality on the thermoelectric power factor of Si NWs can be observed at diameters below ~7nm, and that quantum confinement and different transport orientations offer the possibility for power factor optimization.Comment: 42 pages, 14 figures; Journal of Computational Electronics, 201

Dynamic Localization in Anisotropic Coulomb Systems: Field Induced Crossover of the Exciton Dimension

The effective dimensionality of excitons can be drastically changed by applying an alternating electric field. On the basis of a full three-dimensional description of both coherent and incoherent phenomena in anisotropic structures it is found that appropriate applied oscillating fields change the exciton wave function from anisotropic three dimensional to basically two dimensional. This effective-dimension change is caused by dynamic localization which leads to an increase of the exciton binding energy and of the corresponding oscillator strength

Ultrafast carrier relaxation and vertical-transport phenomena in semiconductor superlattices: A Monte Carlo analysis

The ultrafast dynamics of photoexcited carriers in semiconductor superlattices is studied theoretically on the basis of a Monte Carlo solution of the coupled Boltzmann transport equations for electrons and holes. The approach allows a kinetic description of the relevant interaction mechanisms such as intra- miniband and interminiband carrier-phonon scattering processes. The energy relaxation of photoexcited carriers, as well as their vertical transport, is investigated in detail. The effects of the multiminiband nature of the superlattice spectrum on the energy relaxation process are discussed with particular emphasis on the presence of Bloch oscillations induced by an external electric field. The analysis is performed for different superlattice structures and excitation conditions. It shows the dominant role of carrier-polar-optical-phonon interaction in determining the nature of the carrier dynamics in the low-density limit. In particular, the miniband width, compared to the phonon energy, turns out to be a relevant quantity in predicting the existence of Bloch oscillations