InAs/InP single quantum wire formation and emission at 1.5 microns

Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wires at 1.5 microns. Additional sharp features are related to monolayer fluctuations of the two dimensional InAs layer present during the early stages of the quantum wire self-assembling process.Comment: 4 pages and 3 figures submitted to Applied Physics Letter

Surface structure in simple liquid metals. An orbital free first principles study

Molecular dynamics simulations of the liquid-vapour interfaces in simple sp-bonded liquid metals have been performed using first principles methods. Results are presented for liquid Li, Na, K, Rb, Cs, Mg, Ba, Al, Tl, and Si at thermodynamic conditions near their respective triple points, for samples of 2000 particles in a slab geometry. The longitudinal ionic density profiles exhibit a pronounced stratification extending several atomic diameters into the bulk, which is a feature already experimentally observed in liquid K, Ga, In, Sn and Hg. The wavelength of the ionic oscillations shows a good scaling with the radii of the associated Wigner-Seitz spheres. The structural rearrangements at the interface are analyzed in terms of the transverse pair correlation function, the coordination number and the bond-angle distribution between nearest neighbors. The valence electronic density profile also shows (weaker) oscillations whose phase, with respect to those of the ionic profile, changes from opposite phase in the alkalis to almost in-phase for Si.Comment: 16 pages, 18 figures, 5 tables. Submitted to Phys. Rev.

Noise suppression due to long-range Coulomb interaction: Crossover between diffusive and ballistic transport regimes

We present a Monte Carlo analysis of shot-noise suppression due to long-range Coulomb interaction in semiconductor samples under a crossover between diffusive and ballistic transport regimes. By varying the mean time between collisions we find that the strong suppression observed under the ballistic regime persists under quasi-ballistic conditions, before being washed out when a complete diffusive regime is reached.Comment: RevTex, 3 pages, 4 figures, minor correction

Interplay of Coulomb and electron-phonon interactions in graphene

We consider mutual effect of the electron-phonon and strong Coulomb interactions on each other by summing up leading logarithmic corrections via the renormalization group approach. We find that the Coulomb interaction enhances electron coupling to the intervalley A1 optical phonons, but not to the intravalley E2 phonons