387 research outputs found
Kallikrein-ähnliche Peptidasen 4, 5, 7 und 12 als prognostische Biomarker beim fortgeschrittenen high grade serösen Ovarialkarzinom und triple-negativen Mammakarzinom
In the current study, mRNA expression levels of KLK4, 5, 7 and 12 were investigated in tumor tissues of two patient cohorts, either afflicted with advanced high-grade serous ovarian cancer (HGSOC) or triple-negative breast cancer (TNBC). Together with available KLK5 and KLK7 protein data from a previous study, coordinate expression was observed between KLK5 and KLK7 in both entities. Moreover, elevated KLK4 and KLK7 mRNA levels were found to represent independent unfavorable prognostic biomarkers in HGSOC, while elevated KLK12 mRNA expression was independently related to worse prognosis in TNBC.In der aktuellen Studie wurden mRNA-Expressionsniveaus von KLK4, 5, 7 und 12 im Tumorgewebe von Patientinnen-Kohorten, zum einen mit fortgeschrittenem high grade serösen Ovarialkarzinom (HGSOC) und zum anderen mit triple-negativem Mammakarzinom (TNBC) bestimmt. Zusammen mit verfügbaren KLK5 und KLK7 Protein-Daten wurde eine koordinierte Expression von KLK5 und KLK7 in beiden Entitäten festgestellt. Darüber hinaus stellen hohe KLK4 und KLK7 mRNA-Werte unabhängige ungünstige prognostische Biomarker beim HGSOC dar, während beim TNBC eine erhöhte KLK12 mRNA-Expression unabhängig mit einer schlechteren Prognose assoziiert ist
Atomistic pseudopotential calculations of the optical properties of InAs/InP self-assembled quantum dots
We present a comprehensive study of the optical properties of InAs/InP
self-assembled quantum dots (QDs) using an empirical pseudopotential method and
configuration interaction treatment of the many-particle effects. The results
are compared to those of InAs/GaAs QDs. The main results are: (i) The alignment
of emission lines of neutral exciton, charged exciton and biexciton in InAs/InP
QDs is quite different from that in InAs/GaAs QDs. (ii) The hidden correlation
in InAs/InP QDs is 0.7 - 0.9 meV, smaller than that in InAs/GaAs QDs. (iii) The
radiative lifetimes of neutral exciton, charged exciton and biexciton in
InAs/InP QDs are about twice longer than those in InAs/GaAs QDs. (v) The phase
diagrams of few electrons and holes in InAs/InP QDs differ greatly from those
in InAs/GaAs QDs. The filling orders of electrons and holes are shown to obey
the Hund's rule and Aufbau principle, and therefore the photoluminescence
spectra of highly charged excitons are very different from those of InAs/GaAs
QDs.Comment: 10 pages, 11 figure
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