Penalized maximum likelihood and semiparametric second-order efficiency

We consider the problem of estimation of a shift parameter of an unknown symmetric function in Gaussian white noise. We introduce a notion of semiparametric second-order efficiency and propose estimators that are semiparametrically efficient and second-order efficient in our model. These estimators are of a penalized maximum likelihood type with an appropriately chosen penalty. We argue that second-order efficiency is crucial in semiparametric problems since only the second-order terms in asymptotic expansion for the risk account for the behavior of the ``nonparametric component'' of a semiparametric procedure, and they are not dramatically smaller than the first-order terms.Comment: Published at http://dx.doi.org/10.1214/009053605000000895 in the Annals of Statistics (http://www.imstat.org/aos/) by the Institute of Mathematical Statistics (http://www.imstat.org

Strong Electron Tunneling through a Small Metallic Grain

Electron tunneling through mesoscopic metallic grains can be treated perturbatively only provided the tunnel junction conductances are sufficiently small. If it is not the case, fluctuations of the grain charge become strong. As a result (i) contributions of all -- including high energy -- charge states become important and (ii) excited charge states become broadened and essentially overlap. At the same time the grain charge remains discrete and the system conductance $e$-periodically depends on the gate charge. We develop a nonperturbative approach which accounts for all these features and calculate the temperature dependent conductance of the system in the strong tunneling regime at different values of the gate charge.Comment: revtex, 8 pages, 2 .ps figure

Statistics of voltage fluctuations in resistively shunted Josephson junctions

The intrinsic nonlinearity of Josephson junctions converts Gaussian current noise in the input into non-Gaussian voltage noise in the output. For a resistively shunted Josephson junction with white input noise we determine numerically exactly the properties of the few lowest cumulants of the voltage fluctuations, and we derive analytical expressions for these cumulants in several important limits. The statistics of the voltage fluctuations is found to be Gaussian at bias currents well above the Josephson critical current, but Poissonian at currents below the critical value. In the transition region close to the critical current the higher-order cumulants oscillate and the voltage noise is strongly non-Gaussian. For coloured input noise we determine the third cumulant of the voltage.Comment: 9 pages, 5 figure

Evidence for magnetoplasmon character of the cyclotron resonance response of a two-dimensional electron gas

Experimental results on the absolute magneto-transmission of a series of high density, high mobility GaAs quantum wells are compared with the predictions of a recent magnetoplasmon theory for values of the filling factor above 2. We show that the magnetoplasmon picture can explain the non-linear features observed in the magnetic field evolution of the cyclotron resonance energies and of the absorption oscillator strength. This provides experimental evidence that inter Landau level excitations probed by infrared spectroscopy need to be considered as many body excitations in terms of magnetoplasmons: this is especially true when interpreting the oscillator strengths of the cyclotron transitions

Strong Tunneling and Coulomb Blockade in a Single-Electron Transistor

We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the effective conductance 8 times higher than the quantum value (6.45 k$\Omega$)$^{-1}$. A good agreement between our experimental data and theoretical results for the strong tunneling limit is found. A reliable operation of transistors with conductances 3-4 times larger than the quantum value is demonstrated.Comment: revtex, 4 page

Electron transport through interacting quantum dots

We present a detailed theoretical investigation of the effect of Coulomb interactions on electron transport through quantum dots and double barrier structures connected to a voltage source via an arbitrary linear impedance. Combining real time path integral techniques with the scattering matrix approach we derive the effective action and evaluate the current-voltage characteristics of quantum dots at sufficiently large conductances. Our analysis reveals a reach variety of different regimes which we specify in details for the case of chaotic quantum dots. At sufficiently low energies the interaction correction to the current depends logarithmically on temperature and voltage. We identify two different logarithmic regimes with the crossover between them occurring at energies of order of the inverse dwell time of electrons in the dot. We also analyze the frequency-dependent shot noise in chaotic quantum dots and elucidate its direct relation to interaction effects in mesoscopic electron transport.Comment: 21 pages, 4 figures. References added, discussion slightly extende

Coulomb Interaction and Quantum Transport through a Coherent Scatterer

An interplay between charge discreteness, coherent scattering and Coulomb interaction yields nontrivial effects in quantum transport. We derive a real time effective action and an equivalent quantum Langevin equation for an arbitrary coherent scatterer and evaluate its current-voltage characteristics in the presence of interactions. Within our model, at large conductances $G_0$ and low $T$ (but outside the instanton-dominated regime) the interaction correction to $G_0$ saturates and causes conductance suppression by a universal factor which depends only on the type of the conductor.Comment: 4 pages, no figure

Quantal Brownian Motion - Dephasing and Dissipation

We analyze quantal Brownian motion in $d$ dimensions using the unified model for diffusion localization and dissipation, and Feynman-Vernon formalism. At high temperatures the propagator possess a Markovian property and we can write down an equivalent Master equation. Unlike the case of the Zwanzig-Caldeira-Leggett model, genuine quantum mechanical effects manifest themselves due to the disordered nature of the environment. Using Wigner picture of the dynamics we distinguish between two different mechanisms for destruction of coherence. The analysis of dephasing is extended to the low temperature regime by using a semiclassical strategy. Various results are derived for ballistic, chaotic, diffusive, both ergodic and non-ergodic motion. We also analyze loss of coherence at the limit of zero temperature and clarify the limitations of the semiclassical approach. The condition for having coherent effect due to scattering by low-frequency fluctuations is also pointed out. It is interesting that the dephasing rate can be either larger or smaller than the dissipation rate, depending on the physical circumstances.Comment: LaTex, 23 pages, 4 figures, published vesio

Full Counting Statistics for a Single-Electron Transistor, Non-equilibrium Effects at Intermediate Conductance

We evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation we account for the renormalization of system parameters. Nonequilibrium effects induce a lifetime broadening of the charge-state levels, which suppress large current fluctuations.Comment: 4 pages, 1 figur