114 research outputs found
Spin transport and spin dephasing in zinc oxide
The wide bandgap semiconductor ZnO is interesting for spintronic applications
because of its small spin-orbit coupling implying a large spin coherence
length. Utilizing vertical spin valve devices with ferromagnetic electrodes
(TiN/Co/ZnO/Ni/Au), we study the spin-polarized transport across ZnO in
all-electrical experiments. The measured magnetoresistance agrees well with the
prediction of a two spin channel model with spin-dependent interface
resistance. Fitting the data yields spin diffusion lengths of 10.8nm (2K),
10.7nm (10K), and 6.2nm (200K) in ZnO, corresponding to spin lifetimes of 2.6ns
(2K), 2.0ns (10K), and 31ps (200K).Comment: 7 pages, 5 figures; supplemental material adde
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