3,091 research outputs found
The Ferromagnetism in the Vicinity of Lifshitz Topological Transitions
We show that the critical temperature of a ferromagnetic phase transition in
a quasi-two-dimensional hole gas confined in a diluted magnetic semiconductor
quantum well strongly depends on the hole chemical potential and hole density.
The significant variations of the the Curie temperature occur close to the
Lifshitz topological transition points where the hole Fermi surface acquires
additional components of topological connectivity due to the filling of excited
size-quantization subbands. The model calculations demonstrate that the Curie
temperature can be doubled by a small variation of the gate voltage for the
CdMnTe/CdMgTe quantum well based device
Magnetic field effects on spin relaxation in heterostructures
Effect of magnetic field on electron spin relaxation in quantum wells is
studied theoretically. We have shown that Larmor effect and cyclotron motion of
carriers can either jointly suppress D'yakonov-Perel' spin relaxation or
compensate each other. The spin relaxation rates tensor is derived for any
given direction of the external field and arbitrary ratio of bulk and
structural contributions to spin splitting. Our results are applied to the
experiments on electron spin resonance in SiGe heterostructures, and enable us
to extract spin splitting value for such quantum wells.Comment: 6 pages, 4 figure
Spin noise in quantum dot ensembles
We study theoretically spin fluctuations of resident electrons or holes in
singly charged quantum dots. The effects of external magnetic field and
effective fields caused by the interaction of electron and nuclei spins are
analyzed. The fluctuations of spin Faraday, Kerr and ellipticity signals
revealing the spin noise of resident charge carriers are calculated for the
continuous wave probing at the singlet trion resonance.Comment: 8 pages, 4 figure
Hole spin relaxation in [001] strained asymmetric Si/SiGe and Ge/SiGe quantum wells
Hole spin relaxation in [001] strained asymmetric Si/SiGe
(Ge/SiGe) quantum wells is investigated in the situation with
only the lowest hole subband being relevant. The effective Hamiltonian of the
lowest hole subband is obtained by the subband L\"owdin perturbation method in
the framework of the six-band Luttinger model, with
sufficient basis functions included. The lowest hole subband in Si/SiGe quantum
wells is light-hole like with the Rashba spin-orbit coupling term depending on
momentum both linearly and cubically, while that in Ge/SiGe quantum wells is a
heavy hole state with the Rashba spin-orbit coupling term depending on momentum
only cubically. The hole spin relaxation is investigated by means of the fully
microscopic kinetic spin Bloch equation approach, with all the relevant
scatterings considered. It is found that the hole-phonon scattering is very
weak, which makes the hole-hole Coulomb scattering become very important. The
hole system in Si/SiGe quantum wells is generally in the strong scattering
limit, while that in Ge/SiGe quantum wells can be in either the strong or the
weak scattering limit. The Coulomb scattering leads to a peak in both the
temperature and hole density dependences of spin relaxation time in Si/SiGe
quantum wells, located around the crossover between the degenerate and
nondegenerate regimes. Nevertheless, the Coulomb scattering leads to not only a
peak but also a valley in the temperature dependence of spin relaxation time in
Ge/SiGe quantum wells.... (The remaining is omitted due to the limit of space).Comment: 12 pages, 11 figures, PRB in pres
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