3 research outputs found
Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films
Effects of spin-orbit coupling and s-d exchange interaction are probed by
magnetoresistance measurements carried out down to 50 mK on ZnO and
Zn_{1-x}Mn_{x}O with x = 3 and 7%. The films were obtained by laser ablation
and doped with Al to electron concentration ~10^{20} cm^{-3}. A quantitative
description of the data for ZnO:Al in terms of weak-localization theory makes
it possible to determine the coupling constant \lambda_{so} = (4.4 +-
0.4)*10^{-11} eVcm of the kp hamiltonian for the wurzite structure, H_{so} =
\lambda_{so}*c(s x k). A complex and large magnetoresistance of
Zn_{1-x}Mn_{x}O:Al is interpreted in terms of the influence of the s-d
spin-splitting and magnetic polaron formation on the disorder-modified
electron-electron interactions. It is suggested that the proposed model
explains the origin of magnetoresistance observed recently in many magnetic
oxide systems.Comment: 4 pages, 4 figure
Ferromagnetic semiconductors
The current status and prospects of research on ferromagnetism in
semiconductors are reviewed. The question of the origin of ferromagnetism in
europium chalcogenides, chromium spinels and, particularly, in diluted magnetic
semiconductors is addressed. The nature of electronic states derived from 3d of
magnetic impurities is discussed in some details. Results of a quantitative
comparison between experimental and theoretical results, notably for Mn-based
III-V and II-VI compounds, are presented. This comparison demonstrates that the
current theory of the exchange interactions mediated by holes in the valence
band describes correctly the values of Curie temperatures T_C magnetic
anisotropy, domain structure, and magnetic circular dichroism. On this basis,
chemical trends are examined and show to lead to the prediction of
semiconductor systems with T_C that may exceed room temperature, an expectation
that are being confirmed by recent findings. Results for materials containing
magnetic ions other than Mn are also presented emphasizing that the double
exchange involving hoping through d states may operate in those systems.Comment: 18 pages, 8 figures; special issue of Semicon. Sci. Technol. on
semiconductor spintronic