Multi-strap in-port ICRF antenna modeling and development in support of ITER and EU-DEMO

Full-size 3D model of ITER ICRF antenna with 1D plasma electron density (ne) and 3D ne (from EMC3-Eirene) was simulated using the RAPLICASOL (COMSOL-based) code. Impedance matrices and coupled power agree well with TOPICA with 1D ne. Cases with 3D ne show port-to-port differences compared to 1D ne, as well as a lower (about 10%) coupled power. Efficient minimization of ITER antenna near-fields (to reduce RF sheaths by optimizing feeding) calculated by TOPICA and RAPLICASOL is possible with [0;π;π;0] (about balanced strap powers) and is even lower with [0;π;0;π] toroidal phasing (with dominant power from central straps). Lowest near-fields are with [0;π] poloidal phasing, but [0;-π/2] will be used in a load resilience setup with 3dB splitters. Under EUROfusion prospective research and development, in-port ICRF antenna concept for EU-DEMO with 8 quadruplets (4x toroidal by 2x poloidal) is considered to deliver 16.7 MW (3 antennas yielding 50 MW). Areas around the equatorial port and cut-ins in breeding blankets are used, with emphasis on [0;π;π;0] optimization. High-resolution RAPLICASOL calculations with full ne profile (without imposing a minimum ne value) shed light on field distribution with propagative slow wave in detailed antenna geometry

Operation modes of the FALCON ion source as a part of the AMS cluster tool

The paper investigates the options to increase the production yield of temperature compensated surface acoustic wave (SAW) devices with a defined range of operational frequencies. The paper focuses on the preparation of large wafers with SiO2 and AlN/Si3N4 depositions. Stability of the intermediate SiO2 layer is achieved by combining high power density UV radiation with annealing in high humidity environment. A uniform thickness of the capping AlN layer is achieved by local high-rate etching with a focused ion beam emitted by the FALCON ion source. Operation parameters and limitations of the etching process are discussed