28 research outputs found

    First experimental results of the spatial resolution of RSD pad arrays read out with a 16-ch board

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    Resistive Silicon Detectors (RSD, also known as AC-LGAD) are innovative silicon sensors, based on the LGAD technology, characterized by a continuous gain layer that spreads across the whole sensor active area. RSDs are very promising tracking detectors, thanks to the combination of the built-in signal sharing with the internal charge multiplication, which allows large signals to be seen over multiple read-out channels. This work presents the first experimental results obtained from a 3×\times4 array with 200~\mum~pitch, coming from the RSD2 production manufactured by FBK, read out with a 16-ch digitizer. A machine learning model has been trained, with experimental data taken with a precise TCT laser setup, and then used to predict the laser shot positions, finding a spatial resolution of ~ 5.5 um

    High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors

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    The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sensors from the second RSD production at the Fondazione Bruno Kessler. The paper first introduces the parametrization of the errors in the determination of the position and time coordinates in RSD, then outlines the reconstruction method, and finally presents the results. Three different pixel sizes are used in the analysis: 200 x 340, 450 x 450, and 1300 x 1300 microns^2. At gain = 30, the 450 x 450 microns^2 pixel achieves a time jitter of 20 ps and a spatial resolution of 15 microns concurrently, while the 1300 x 1300 microns^2 pixel achieves 30 ps and 30 micron, respectively. The implementation of cross-shaped electrodes improves considerably the response uniformity over the pixel surface.Comment: 28 pages, 23 figures submitted to NIM

    Accessing the strong interaction between Λ baryons and charged kaons with the femtoscopy technique at the LHC

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    The interaction between Λ baryons and kaons/antikaons is a crucial ingredient for the strangeness S=0 and S=-2 sector of the meson–baryon interaction at low energies. In particular, the Lambda-Kbar might help in understanding the origin of states such as the Csi(1620), whose nature and properties are still under debate. Experimental data on Lambda-K and Lambda-Kbar systems are scarce, leading to large uncertainties and tension between the available theoretical predictions constrained by such data. In this Letter we present the measurements of Λ–KK− and Λ–KK+ correlations obtained in the high-multiplicity triggered data sample in pp collisions at sqrt(s) = 13 TeV recorded by ALICE at the LHC. The correlation function for both pairs is modeled using the Lednický–Lyuboshits analytical formula and the corresponding scattering parameters are extracted. The Λ–KK+ correlations show the presence of several structures at relative momenta k* above 200 MeV/c, compatible with the Ω baryon, the , and resonances decaying into Λ–K− pairs. The low k* region in the Λ–KK+ also exhibits the presence of the state, expected to strongly couple to the measured pair. The presented data allow to access the ΛK+ and ΛK− strong interaction with an unprecedented precision and deliver the first experimental observation of the decaying into ΛK−

    Silicon sensors with resistive read-out: Machine Learning techniques for ultimate spatial resolution

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    Resistive AC-coupled Silicon Detectors (RSDs) are based on the Low Gain Avalanche Diode (LGAD) technology, characterized by a continuous gain layer, and by the innovative introduction of resistive read-out. Thanks to a novel electrode design aimed at maximizing signal sharing, RSD2, the second RSD production by Fondazione Bruno Kessler (FBK), achieves a position resolution on the whole pixel surface of about 8 for 200- pitch. RSD2 arrays have been tested using a Transient Current Technique setup equipped with a 16-channel digitizer, and results on spatial resolution have been obtained with machine learning algorithms

    DC-coupled resistive silicon detectors for 4D tracking

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    In this work, we introduce a new design concept: the DC-coupled Resistive Silicon Detectors, based on the LGAD technology. This new design intends to address a few known drawbacks of the first generation of AC-coupled Resistive Silicon Detectors (RSD). The sensor behaviour is simulated using a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. The simulation demonstrates that the key features of the RSD design are maintained, yielding excellent space and time resolutions: a few microns and a few tens of ps. In this report, we will outline the optimization methodology and the results of the simulation. We will also present detailed studies on the effects induced by the choice of key design parameters on the space and time resolutions provided by this sensor

    Communication and Timing Issues with MPI Virtualization

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    Computation–communication overlap and good load balance are features central to high performance of parallel programs. Unfortunately, achieving them with MPI requires considerably increasing the complexity of user code. Our work contributes to the alternative solution to this problem: using a virtualized MPI implementation. Virtualized MPI implementations diverge from traditional MPI implementations in that they map MPI processes to user-level threads instead of operating-system processes and launch more of them than there are CPU cores in the system. They are capable of providing automatic computation–communication overlap and load balance with little to no changes to pre-existing MPI user code. Our work has uncovered new insights into MPI virtualization: Two new kinds of timers are needed: an MPI-process timer and a CPU-core timer, the same discussion also applies to performance counters and the MPI profiling interface. We also observe an interplay between the degree of CPU oversubscription and the rendezvous communication protocol: we find that the intuitive expectation of only two MPI processes per CPU core being enough to achieve full computation–communication overlap is wrong for the rendezvous protocol—instead, three MPI processes per CPU core are required in that case. Our findings are expected to be applicable to all virtualized MPI implementations as well as to general tasking runtime systems

    A compensated design of the LGAD gain layer

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    In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting 5E16/cm atoms of an acceptor material, typically Boron or Gallium, in the region below the n electrode. In our design, we aim at designing a gain layer resulting from the overlap of a p and an n implants: the difference between acceptor and donor doping will result in an effective concentration of about 5E16/cm, similar to standard LGADs. At present, the gain mechanism of LGAD sensors under irradiation is maintained up to a fluence of 1–2E15/cm, and then it is lost due to the acceptor removal mechanism. The new design will be more resilient to radiation, as both acceptor and donor atoms will undergo removal with irradiation, but their difference will maintain constant. The compensated design will empower the 4D tracking ability typical of the LGAD sensors well above 1E16/cm2
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