Electron and trap dynamics in As-ion-implanted and annealed GaAs

The ultrafast dynamics of As-ion-implanted and annealed GaAs is investigated using transmission pump–probe measurements.Carrier recombination time was found to increase from 4 to 40 ps with increasing annealing temperature. At lower annealing temperatures, the transmitted optical signal is dominated by induced absorption and at higher annealing temperatures this effect is replaced by induced transparency.This work was supported in part by the EC INCOCOPERNICUS project ‘‘DUO—devices for ultrafast optoelectronics’’ and the Lithuanian Science and Study Foundation