ELECTRONIC PROPERTIES OF FLASH-EVAPORATED AMORPHOUS GaSb FILMS

The optical and transport properties of flash-evaporated amorphous GaSb thin films are described as a function of preparation conditions. The results for nearly-stoichiometric samples are discussed in relation with the presence of defects. The influence of Sb excess is also considered

DISORDER EFFECTS ON GaP CORE LEVELS STUDIED BY ELECTRON SPECTROSCOPIES

A study by X-ray induced photoelectron and Auger electron spectroscopies of P and Ga core levels from flash-evaporated crystalline and amorphous Gap films is presented. Beside the effects of contamination the results indicate the existence of partial chemical disorder in the amorphous material

COMPARATIVE STUDY OF THE STRUCTURE OF AMORPHOUS Ge AND AMORPHOUS III-V COMPOUNDS

La structure de couches minces de Ge et GaAs amorphes préparées par évaporation, non recuites et recuites, est étudiée par diffraction électronique. Les fonctions d'interférence ainsi que les fonctions de distribution radiale sont comparées aux prédictions de deux modèles de réseau continu aléatoire comprenant ou non des anneaux à nombre impair d'atomes, avant et après relaxation. On confirme que les composés tétracoordonnés amorphes doivent contenir une proportion négligeable d'anneaux impairs.The structure of evaporated amorphous Ge and flash-evaporated amorphous GaAs films, both as-deposited and annealed, is investigated by careful electron diffraction experiments. Both the interference functions and the radial distribution functions are compared to the predictions of two unrelaxed and relaxed continuous random network models with and without odd-membered rings. It is confirmed that amorphous tetracoordinated compounds must contain a negligible proportion of odd-membered rings

INVESTIGATION OF THE L NEAR-EDGE STRUCTURE IN CRYSTALLINE AND AMORPHOUS GaAs

Une étude comparée des spectres de photoabsorption au voisinage des seuils L3 de As et de Ga dans GaAs amorphe et cristallisé a montré que seuls les états s du Ga sont présents dans le bas de la bande de conduction. Le désordre n'induit pas de mélange sensible des états de As et de Ga au voisinage du seuil.A comparative study of the photoabsorption spectra near the As and Ga L3 edges in amorphous and crystalline GaAs has shown that only Ga s-states are found at the bottom of the conduction band. Disorder does not induce noticeable admixture of As and Ga states close to the band edge