Contribution to the Calculation of Physical Properties of BeSe Semiconductor

We expose various physical parameters of binary compound BeSe in the stable zinc blend and NiAs structures using the functional HSE hybrid, GGA-PBE, and LDA. We deduce elastic constants, mechanical parameters, and wave velocities according to different orientations. BeSe semiconductor has Γ-X (2.852 eV) and Γ-K (0.536 eV) bandgap in zinc blend and NiAs structures. Electrons transit from Se-p site to the Be-s state and show covalent bonding. Optical absorption peaks result from electronic transitions under ultraviolet light irradiation

Effect of deposition conditions on the magnetic properties of evaporated Fe thin films

Fe thin films have been deposited by thermal evaporation onto glass substrate. The thickness ranges from 76 to 431 nm range, while deposition rates are between 0.3 and 13.4 Å/s. The magnetic properties of these Fe thin films are investigated. The magnetic properties were inferred from B-H hysteresis curves. The magnetic field was applied both in-plane and perpendicular to the film. The coercive field HC and the saturation field HS were derived for both configurations. The effects of the preparation conditions – thickness, deposition time and deposition rate – on the HC and HS behaviors are investigated. Interesting features are observed as a function of the elaboration conditions. Also, the variation of HC with grain size reveals the different mechanisms responsible for the coercive field values