3,498 research outputs found

    Impact of precisely positioned dopants on the performance of an ultimate silicon nanowire transistor: a full three-dimensional NEGF simulation study

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    In this paper, we report the first systematic study of quantum transport simulation of the impact of precisely positioned dopants on the performance of ultimately scaled gate-all-around silicon nanowire transistors (NWTs) designed for digital circuit applications. Due to strong inhomogeneity of the selfconsistent electrostatic potential, a full 3-D real-space nonequilibrium Green function formalism is used. The simulations are carried out for an n-channel NWT with 2.2 × 2.2 nm2 cross section and 6-nm channel length, where the locations of the precisely arranged dopants in the source-drain extensions and in the channel region have been varied. The individual dopants act as localized scatters, and hence, impact of the electron transport is directly correlated to the position of the single dopants. As a result, a large variation in the ON-current and a modest variation of the subthreshold slope are observed in the ID-VG characteristics when comparing devices with microscopically different discrete dopant configurations. The variations of the current-voltage characteristics are analyzed with reference to the behavior of the transmission coefficients

    Optical-NIR analysis of globular clusters in the IKN dwarf spheroidal: a complex star formation history

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    Age, metallicity and spatial distribution of globular clusters (GCs) provide a powerful tool to reconstruct major star-formation episodes in galaxies. IKN is a faint dwarf spheroidal (dSph) in the M81 group of galaxies. It contains five old GCs, which makes it the galaxy with the highest known specific frequency (SN=126). We estimate the photometric age, metallicity and spatial distribution of the poorly studied IKN GCs. We search SDSS for GC candidates beyond the HST field of view, which covers half of IKN. To break the age-metallicity degeneracy in the V-I colour we use WHT/LIRIS Ks-band photometry and derive photometric ages and metallicities by comparison with SSP models in the V,I,Ks colour space. IKN GCs' VIKs colours are consistent with old ages ( ⁣8\geq\!8 Gyr) and a metallicity distribution with a higher mean than typical for such a dSph ([Fe/H] ⁣ ⁣1.40.2+0.6]\!\simeq\!-1.4_{-0.2}^{+0.6} dex). Their photometric masses range (0.5<MGC<4×105M0.5 <{\cal M_{\rm GC}}<4\times10^5M_\odot) implies a high mass ratio between GCs and field stars, of 10.6%10.6\%. Mixture model analysis of the RGB field stars' metallicity suggests that 72\% of the stars may have formed together with the GCs. Using the most massive GC-SFR relation we calculate a SFR of  ⁣10M/\sim\!10M_\odot/yr during its formation epoch. We note that the more massive GCs are closer to the galaxy photometric centre. IKN GCs also appear spatially aligned along a line close to the IKN major-axis and nearly orthogonal to the plane of spatial distribution of galaxies in the M81 group. We identify one new IKN GC candidate based on colour and PSF analysis of the SDSS data. The evidence towards i) broad and high metallicity distribution of the field IKN RGB stars and its GCs, ii) high fraction and iii), spatial alignment of IKN GCs, supports a scenario for tidally triggered complex IKN's SFH in the context of interactions with galaxies in the M81 group.Comment: 12 pages, 9 figures, accepted to A&

    A Unified Conformal Field Theory Description of Paired Quantum Hall States

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    The wave functions of the Haldane-Rezayi paired Hall state have been previously described by a non-unitary conformal field theory with central charge c=-2. Moreover, a relation with the c=1 unitary Weyl fermion has been suggested. We construct the complete unitary theory and show that it consistently describes the edge excitations of the Haldane-Rezayi state. Actually, we show that the unitary (c=1) and non-unitary (c=-2) theories are related by a local map between the two sets of fields and by a suitable change of conjugation. The unitary theory of the Haldane-Rezayi state is found to be the same as that of the 331 paired Hall state. Furthermore, the analysis of modular invariant partition functions shows that no alternative unitary descriptions are possible for the Haldane-Rezayi state within the class of rational conformal field theories with abelian current algebra. Finally, the known c=3/2 conformal theory of the Pfaffian state is also obtained from the 331 theory by a reduction of degrees of freedom which can be physically realized in the double-layer Hall systems.Comment: Latex, 42 pages, 2 figures, 3 tables; minor corrections to text and reference

    Model turbulent floods with the Smagorinski large eddy closure

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    Floods, tides and tsunamis are turbulent, yet conventional models are based upon depth averaging inviscid irrotational flow equations. We propose to change the base of such modelling to the Smagorinksi large eddy closure for turbulence in order to appropriately match the underlying fluid dynamics. Our approach allows for large changes in fluid depth to cater for extreme inundations. The key to the analysis underlying the approach is to choose surface and bed boundary conditions that accommodate a constant turbulent shear as a nearly neutral mode. Analysis supported by slow manifold theory then constructs a model for the coupled dynamics of the fluid depth and the mean turbulent lateral velocity. The model resolves the internal turbulent shear in the flow and thus may be used in further work to rationally predict erosion and transport in turbulent floods

    Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors

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    In this work, we investigated the performance of vertically stacked lateral nanowires transistors (NWTs) considering the effects of series resistance. Also, we consider the vertical positions of the lateral nanowires in the stack and diameter variation of the lateral NWTs as new sources of process variability

    Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors

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    In this work, we present a simulation study of vertically stacked lateral nanowires transistors (NWTs) considering various sources of statistical variability. Our simulation approach is based on various simulations techniques to capture the complexity in such ultra-scaled device

    Positive solutions for a class of non-autonomous second order difference equations via a new functional fixed point theorem

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    summary:In this paper, by using recent results on fixed point index, we develop a new fixed point theorem of functional type for the sum of two operators T+ST+S where ITI-T is Lipschitz invertible and SS a kk-set contraction. This fixed point theorem is then used to establish a new result on the existence of positive solutions to a non-autonomous second order difference equation
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