8 research outputs found
Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation
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Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation
No full textReactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors
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GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric
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