Electron-Electron Relaxation Effect on Auger Recombination in Direct Band Semiconductors

Influence of electron-electron relaxation processes on Auger recombination rate in direct band semiconductors is investigated. Comparison between carrier-carrier and carrier-phonon relaxation processes is provided. It is shown that relaxation processes are essential if the free path length of carriers doesn't exceed a certain critical value, which exponentially increases with temperature. For illustration of obtained results a typical InGaAsP compound is used

Scattering states of coupled valence-band holes in point defect potential derived from variable phase theory

In this article we present a method to compute the scattering states of holes in spherical bands in the strong spin-orbit coupling regime. More precisely, we calculate scattering phase shifts and amplitudes of holes induced by defects in a semiconductor crystal. We follow a previous work done on this topic by Ralph [H. I. Ralph, Philips Res. Rept. 32 160 (1977)] to account for the p-wave nature and the coupling of valence band states. We extend Ralph's analysis to incorporate finite-range potentials in the scattering problem. We find that the variable phase method provides a very convenient framework for our purposes and show in detail how scattering amplitudes and phase shifts are obtained. The Green's matrix of the Schroedinger equation, the Lippmann-Schwinger equation and the Born approximation are also discussed. Examples are provided to illustrate our calculations with Yukawa type potentials.Comment: 16 pages and 9 figure

Auger Recombination in Semiconductor Quantum Wells

The principal mechanisms of Auger recombination of nonequilibrium carriers in semiconductor heterostructures with quantum wells are investigated. It is shown for the first time that there exist three fundamentally different Auger recombination mechanisms of (i) thresholdless, (ii) quasi-threshold, and (iii) threshold types. The rate of the thresholdless Auger process depends on temperature only slightly. The rate of the quasi-threshold Auger process depends on temperature exponentially. However, its threshold energy essentially varies with quantum well width and is close to zero for narrow quantum wells. It is shown that the thresholdless and the quasi-threshold Auger processes dominate in narrow quantum wells, while the threshold and the quasi-threshold processes prevail in wide quantum wells. The limiting case of a three-dimensional (3D)Auger process is reached for infinitely wide quantum wells. The critical quantum well width is found at which the quasi-threshold and threshold Auger processes merge into a single 3D Auger process. Also studied is phonon-assisted Auger recombination in quantum wells. It is shown that for narrow quantum wells the act of phonon emission becomes resonant, which in turn increases substantially the coefficient of phonon-assisted Auger recombination. Conditions are found under which the direct Auger process dominates over the phonon-assisted Auger recombination at various temperatures and quantum well widths.Comment: 38 pages, 7 figure

Exact asymptotic form of the exchange interactions between shallow centers in doped semiconductors

The method developed in [L. P. Gor'kov and L. P. Pitaevskii, Sov. Phys. Dokl. 8, 788 (1964); C. Herring and M. Flicker, Phys. Rev. 134, A362 (1964)] to calculate the asymptotic form of exchange interactions between hydrogen atoms in the ground state is extended to excited states. The approach is then applied to shallow centers in semiconductors. The problem of the asymptotic dependence of the exchange interactions in semiconductors is complicated by the multiple degeneracy of the ground state of an impurity (donor or acceptor) center in valley or band indices, crystalline anisotropy and strong spin-orbital interactions, especially for acceptor centers in III-V and II-VI groups semiconductors. Properties of two coupled centers in the dilute limit can be accessed experimentally, and the knowledge of the exact asymptotic expressions, in addition to being of fundamental interest, must be very helpful for numerical calculations and for interpolation of exchange forces in the case of intermediate concentrations. Our main conclusion concerns the sign of the magnetic interaction -- the ground state of a pair is always non-magnetic. Behavior of the exchange interactions in applied magnetic fields is also discussed