Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications

Attempts to optimize recombination characteristics of low-temperature MBE grown GaAs layers for their use in terahertz radiation devices are described and the characteristics of this material are compared with its alternative - As-ion implanted GaAs crystals

Terahertz time-domain-spectroscopy system based on 1.55 μm fiber laser and photoconductive antennas from dilute bismides

We describe a terahertz time-domain-spectroscopy system that is based on photoconductive components fabricated from (GaIn)(AsBi) epitaxial layers and activated by femtosecond 1.55 μm pulses emitted by an Er-doped fiber laser. (GaIn)(AsBi) alloy grown on GaAs substrates contained 12.5%In and 8.5%Bi – a composition corresponding to a symmetrical approach of the conduction and valence band edges to each other. The layers were photosensitive to 1.55 μm wavelength radiation, had relatively large resistivities, and subpicosecond carrier lifetimes – a set of material parameters necessary for fabrication of efficient ultrafast photoconductor devices. The frequency limit of this system was 4.5 THz, its signal-to-noise ratio 65 dB. These parameters were comparable to their typical values for much bulkier solid-state laser based systems

Puslaidininkės medžiagos ultrasparčiajai optoelektronikai

The paper presents a review of experimental investigations of various semiconductor materials used for the development of ultrafast optoelectronic devices activated by femtosecond laser pulses that have been performed at the Optoelectronics Laboratory of the Semiconductor Physics Institute during the period from 1997 to 2008. Technology and physical characteristics of low-temperature-grown GaAs and GaBiAs layers as well as the effect of terahertz radiation from the femtosecond laser excited semiconductor surfaces are described and analysed.Lietuviška santrauka. Pateikta įvairių puslaidininkinių medžiagų, naudojamų kuriant ultrasparčius optoelektronikos prietaisus, žadinamus femtosekundiniais lazeriais, ekspwerimentinių tyrimų apžvalga. Tyrimai atlikti Puslaidininkių fizikos instituto Optoelektronikos laboratorijoje1997-2008 metais. Aprašyta žemoje temperatūroje augintų GaAs ir GaBiAssluoksnių technologija ir fizikinės savybės. Išsamiai aptyartas ir išanalizuotas THz spinduliuotės generavimas iš femtosekundiniu lazeriu sužadintų puslaidininkių paviršiaus

Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications

Attempts to optimize recombination characteristics of low-temperature MBE grown GaAs layers for their use in terahertz radiation devices are described and the characteristics of this material are compared with its alternative - As-ion implanted GaAs crystals