1 research outputs found
Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise
We characterize InSb quantum dots induced by bottom finger gates within a
nanowire that is grown via the vapor-liquid-solid process. The gates are
separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We
probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging
energies of and orbital excitation energies up to
. The gate hysteresis for sweeps covering 5 Coulomb diamonds
reveals an energy hysteresis of only between upwards and
downwards sweeps. Charge noise is studied via long-term measurements at the
slope of a Coulomb peak revealing potential fluctuations of at 1\,Hz. This makes h-BN the dielectric with
the currently lowest gate hysteresis and lowest low-frequency potential
fluctuations reported for low-gap III-V nanowires. The extracted values are
similar to state-of-the art quantum dots within Si/SiGe and Si/SiO
systems