Variations in the work function of doped single- and few-layer graphene assessed by Kelvin probe force microscopy and density functional theory

We present Kelvin probe force microscopy measurements of single-and few-layer graphene resting on SiO2 substrates. We compare the layer thickness dependency of the measured surface potential with ab initio density functional theory calculations of the work function for substrate-doped graphene. The ab initio calculations show that the work function of single-and bilayer graphene is mainly given by a variation of the Fermi energy with respect to the Dirac point energy as a function of doping, and that electrostatic interlayer screening only becomes relevant for thicker multilayer graphene. From the Raman G-line shift and the comparison of the Kelvin probe data with the ab initio calculations, we independently find an interlayer screening length in the order of four to five layers. Furthermore, we describe in-plane variations of the work function, which can be attributed to partial screening of charge impurities in the substrate, and result in a nonuniform charge density in single-layer graphene

Formation of p-n junction in polymer electrolyte-top gated bilayer graphene transistor

We show simultaneous p and n type carrier injection in bilayer graphene channel by varying the longitudinal bias across the channel and the top gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the gate capacitance is measured to be 1.5 $\mu F/cm^2$, a value about 125 times higher than the conventional SiO$_2$ back gate capacitance. Unlike the single layer graphene, the drain-source current does not saturate on varying the drain-source bias voltage. The energy gap opened between the valence and conduction bands using top and back gate geometry is estimated.Comment: 16 pages, 6 figure