All-microwave and low-cost Lamb shift engineering for a fixed frequency multi-level superconducting qubit

It is known that the electromagnetic vacuum is responsible for the Lamb shift, which is a crucial phenomenon in quantum electrodynamics (QED). In circuit QED, the readout or bus resonators that are dispersively coupled can result in a significant Lamb shift of the qubit, much larger than that in the original broadband cases. However, previous approaches or proposals for controlling the Lamb shift in circuit QED demand overheads in circuit designs or non-perturbative renormalization of the system's eigenbases, which can impose formidable limitations.In this work, we propose and demonstrate an efficient and cost-effective method for controlling the Lamb shift of fixed-frequency transmons. We employ the drive-induced longitudinal coupling between the transmon and resonator. By simply using an off-resonant monochromatic driving near the resonator frequency, we can modify the Lamb shift by 32 to -30 MHz without facing the aforementioned challenges. Our work establishes an efficient way of engineering the fundamental effects of the electromagnetic vacuum and provides greater flexibility in non-parametric frequency controls of multilevel systems. In particular, this Lamb shift engineering scheme enables individually control of the frequency of transmons, even without individual drive lines

Investigating laser induced phase engineering in MoS2 transistors

Phase engineering of MoS2 transistors has recently been demonstrated and has led to record low contact resistances. The phase patterning of MoS2 flakes with laser radiation has also been realized via spectroscopic methods, which invites the potential of controlling the metallic and semiconducting phases of MoS2 transistors by simple light exposure. Nevertheless, the fabrication and demonstration of laser patterned MoS2 devices starting from the metallic polymorph has not been demonstrated yet. Here, we study the effects of laser radiation on 1T/1T'-MoS2 transistors with the prospect of driving an in-situ phase transition to the 2H-polymorph through light exposure. We find that although the Raman peaks of 2H-MoS2 become more prominent and the ones from the 1T/1T' phase fade after the laser exposure, the semiconducting properties of the laser patterned devices are not fully restored and the laser treatment ultimately leads to degradation of the transport channel