A new case of t(1;11)(q21;q23) in a child with M1 ANLL

Case report of a translocation : A new case of t(1;11)(q21;q23) in a child with M1 ANLL

QUESADA, ELENA E HIJA [Material gráfico]

Copia digital. Madrid : Ministerio de Educación, Cultura y Deporte, 201

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and also quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells to suppress the temperature dependence of the threshold current in vertical-external-cavity surface-emitting lasers (VECSELs). In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electrodynamics (QED), a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. A difference of this review from the other existing works on semiconductor VECSEL devices is that we will cover both the fundamental aspects and technological approaches of QD VECSEL devices. And lastly, the presented review here has provided a deep insight into useful guideline for the development of QD VECSEL technology and future quantum functional nanophotonic devices and monolithic photonic integrated circuits (MPhICs).Comment: 21 pages, 4 figures. arXiv admin note: text overlap with arXiv:0904.369

RETRATO SIN IDENTIFICAR [Material gráfico]

Copia digital. Madrid : Ministerio de Educación, Cultura y Deporte, 201

High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm

International audienceThe growth conditions and the operation of a diode-pumped AlGaAsSb/GaInAsSb type-I quantum-well vertical cavity surface emitting laser emitting near 2.3μm in an external cavity configuration are reported. The epitaxial structure was grown in two steps on a GaSb substrate by molecular beam epitaxy. It is made of a GaSb/AlAsSb Bragg reflector, a GaInAsSb/AlGaAsSb multi quantum-well active region and an AlAsSb heatspreader layer. A TEM00 low-divergence laser continuous wave mode operation was demonstrated from 277K up to 350K. A characteristic temperature T0 as high as 74K was measured just below 300K. Threshold incident pump power as low as 600 W/cm2 at 277K and a maximum output power of 8.5mW at 288K was observed

Sb-based VCSEL operating at 2.3 μ\mum in continuous wave regime up to 350 K with a TEM00_{00} beam

we report on the growth by MBE and characterization of a laser diode pumped Vertical Cavity Surface Emitting Laser, where the optical cavity is formed by the Bragg mirror, an air gap and a dielectric concave mirror. The laser operates at 2.43 $\mu$m in continuous wave regime up to 350K with a circular TEM$_{00}$ beam

Monolithic, Sb-based Electrically pumped VCSELs emitting at 2.3µm

International audienc