Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling

We report precise TCAD simulations of IHEP-IME-v1 Low Gain Avalanche Diode (LGAD) calibrated by secondary ion mass spectroscopy (SIMS). Our setup allows us to evaluate the leakage current, capacitance, and breakdown voltage of LGAD, which agree with measurements' results before irradiation. And we propose an improved LGAD Radiation Damage Model (LRDM) which combines local acceptor removal with global deep energy levels. The LRDM is applied to the IHEP-IME-v1 LGAD and able to predict the leakage current well at -30 $^{\circ}$C after an irradiation fluence of $\Phi_{eq}=2.5 \times 10^{15} ~n_{eq}/cm^{2}$. The charge collection efficiency (CCE) is under development

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event transient (SET) effects. Via 3D technology computer aided design (TCAD) simulations with insulator fixed charge, radiation, heavy ion, and galvanomagnetic transport models, the performances of the transient current, Hall voltage, sensitivity, efficiency, and offset voltage have been evaluated. For the TID effect, the Hall voltage and sensitivity of the sensor increase after irradiation, while the efficiency and offset voltage decrease. As for TDR and SET effects, when the energy deposited on the sensor during a nuclear explosion or heavy ion injection is small, the transient Hall voltage of the off-state sensor first decreases and then returns to the initial value. However, if the energy deposition is large, the transient Hall voltage first decreases, then increases to a peak value and decreases to a fixed value. The physical mechanisms that produce different trends in the transient Hall voltage have been analyzed in detail

Seismic Fragility of a Multi-Frame Box-Girder Bridge Influenced by Seismic Excitation Angles and Column Height Layouts

Curved multi-frame box-girder bridges with hinges are widely used in the United States due to the large spanning capacity, construction simplification and construction cost economy. This type of bridge frequently has the characteristics of column height asymmetry, adjacent bridge frames vibrating discrepancy. The combination of curved shape and random seismic excitation angles could aggravate the irregularity of the structural seismic response. In this study, an OpenSees model is established for an example bridge, and the hinge is taken as a key component to observe. The impacts of seismic excitation angles and column height layouts on fragility are investigated through the comparison of the fragility curves. The conclusions list the most unfavorable seismic excitation angles corresponding to the fragilities of bridge system, plug-type concrete elements in hinges, hinge restrainers, columns, abutment bearings as well as the secondary components, respectively. The symmetrical column height layout is proved to be beneficial to mitigate the damage risks of restrainers in intermediate hinges and reduce the fragility of the bridge system. This study can provide a reference for the rapid assessment of the fragile position and damage degree of bridges through structural configuration and shape, as well as the seismic excitation angle

Seismic Fragility of a Multi-Frame Box-Girder Bridge Influenced by Seismic Excitation Angles and Column Height Layouts

Curved multi-frame box-girder bridges with hinges are widely used in the United States due to the large spanning capacity, construction simplification and construction cost economy. This type of bridge frequently has the characteristics of column height asymmetry, adjacent bridge frames vibrating discrepancy. The combination of curved shape and random seismic excitation angles could aggravate the irregularity of the structural seismic response. In this study, an OpenSees model is established for an example bridge, and the hinge is taken as a key component to observe. The impacts of seismic excitation angles and column height layouts on fragility are investigated through the comparison of the fragility curves. The conclusions list the most unfavorable seismic excitation angles corresponding to the fragilities of bridge system, plug-type concrete elements in hinges, hinge restrainers, columns, abutment bearings as well as the secondary components, respectively. The symmetrical column height layout is proved to be beneficial to mitigate the damage risks of restrainers in intermediate hinges and reduce the fragility of the bridge system. This study can provide a reference for the rapid assessment of the fragile position and damage degree of bridges through structural configuration and shape, as well as the seismic excitation angle

Low Gain Avalanche Detectors with Good Time Resolution Developed by IHEP and IME for ATLAS HGTD project

This paper shows the simulation and test results of 50um thick Low Gain Avalanche Detectors (LGAD) sensors designed by the Institute of High Energy Physics (IHEP) and fabricated by the Institute of Microelectronics of the Chinese Academy of Sciences (IME). Three wafers have been produced with four different gain layer implant doses each. Different production processes, including variation in the n++ layer implant energy and carbon co-implantation were used. Test results show that the IHEP-IME sensors with the higher dose of gain layer have lower breakdown voltages and higher gain layer voltages from capacitance-voltage properties, which are consistent with the TCAD simulation. Beta test results show that the time resolution of IHEP-IME sensors is better than 35ps when operated at high voltage and the collected charges of IHEP-IME sensors are larger than 15fC before irradiation, which fulfill the required specifications of sensors before irradiations for the ATLAS HGTD project.Comment: 11 pages,8 figure

Design and testing of LGAD sensor with shallow carbon implantation

The low gain avalanche detectors (LGADs) are thin sensors with fast charge collection which in combination with internal gain deliver an outstanding time resolution of about 30 ps. High collision rates and consequent large particle rates crossing the detectors at the upgraded Large Hadron Collider (LHC) in 2028 will lead to radiation damage and deteriorated performance of the LGADs. The main consequence of radiation damage is loss of gain layer doping (acceptor removal) which requires an increase of bias voltage to compensate for the loss of charge collection efficiency and consequently time resolution. The Institute of High Energy Physics (IHEP), Chinese Academy of Sciences (CAS) has developed a process based on the Institute of Microelectronics (IME), CAS capability to enrich the gain layer with carbon to reduce the acceptor removal effect by radiation. After 1 MeV neutron equivalent fluence of 2.5$\times$10$^{15}$ n$_{eq}$/cm$^{2}$, which is the maximum fluence to which sensors will be exposed at ATLAS High Granularity Timing Detector (HGTD), the IHEP-IME second version (IHEP-IMEv2) 50 $\mu$m LGAD sensors already deliver adequate charge collection > 4 fC and time resolution < 50 ps at voltages < 400 V. The operation voltages of these 50 $\mu$m devices are well below those at which single event burnout may occur