Phase transitions induced by correlated hopping in the Falicov-Kimball model

The extrapolation of finite-cluster calculations is used to examine properties of the one-dimensional Falicov-Kimball model with correla It is shown that the correlated hopping strongly influences both the transitions and the conducting properties of the model and so it sho neglected in the correct description of materials with correlated el This is illustrated for two selected values of the Coulomb interacti that represent typical behavior of the model for small and intermedi (strong) interactions. In both cases the insulator-metal transitions (accompanied by continuous or discontinuous valence transitions) ind correlated hopping are observed.Comment: 11 pages, 7 figures, LaTe

Charge Order in the Falicov-Kimball Model

We examine the spinless one-dimensional Falicov-Kimball model (FKM) below half-filling, addressing both the binary alloy and valence transition interpretations of the model. Using a non-perturbative technique, we derive an effective Hamiltonian for the occupation of the localized orbitals, providing a comprehensive description of charge order in the FKM. In particular, we uncover the contradictory ordering roles of the forward-scattering and backscattering itinerant electrons: the latter are responsible for the crystalline phases, while the former produces the phase separation. We find an Ising model describes the transition between the phase separated state and the crystalline phases; for weak-coupling we present the critical line equation, finding excellent agreement with numerical results. We consider several extensions of the FKM that preserve the classical nature of the localized states. We also investigate a parallel between the FKM and the Kondo lattice model, suggesting a close relationship based upon the similar orthogonality catastrophe physics of the associated single-impurity models.Comment: 39 pages, 6 figure

Phase separation due to quantum mechanical correlations

Can phase separation be induced by strong electron correlations? We present a theorem that affirmatively answers this question in the Falicov-Kimball model away from half-filling, for any dimension. In the ground state the itinerant electrons are spatially separated from the classical particles.Comment: 4 pages, 1 figure. Note: text and figure unchanged, title was misspelle

Giant crystal-electric-field effect and complex magnetic behavior in single-crystalline CeRh3Si2

Single-crystalline CeRh3Si2 was investigated by means of x-ray diffraction, magnetic susceptibility, magnetization, electrical resistivity, and specific heat measurements carried out in wide temperature and magnetic field ranges. Moreover, the electronic structure of the compound was studied at room temperature by cerium core-level x-ray photoemission spectroscopy (XPS). The physical properties were analyzed in terms of crystalline electric field and compared with results of ab-initio band structure calculations performed within the density functional theory approach. The compound was found to crystallize in the orthorhombic unit cell of the ErRh3Si2 type (space group Imma -- No.74, Pearson symbol: oI24) with the lattice parameters: a = 7.1330(14) A, b = 9.7340(19) A, and c = 5.6040(11) A. Analysis of the magnetic and XPS data revealed the presence of well localized magnetic moments of trivalent cerium ions. All physical properties were found to be highly anisotropic over the whole temperature range studied, and influenced by exceptionally strong crystalline electric field with the overall splitting of the 4f1 ground multiplet exceeding 5700 K. Antiferromagnetic order of the cerium magnetic moments at TN = 4.70(1)K and their subsequent spin rearrangement at Tt = 4.48(1) K manifest themselves as distinct anomalies in the temperature characteristics of all investigated physical properties and exhibit complex evolution in an external magnetic field. A tentative magnetic B-T phase diagram, constructed for B parallel to the b-axis being the easy magnetization direction, shows very complex magnetic behavior of CeRh3Si2, similar to that recently reported for an isostructural compound CeIr3Si2. The electronic band structure calculations corroborated the antiferromagnetic ordering of the cerium magnetic moments and well reproduced the experimental XPS valence band spectrum.Comment: 32 pages, 12 figures, to appear in Physical Review

Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architectureope

Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale

Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization reversal in a ferroelectric barrier changes the tunneling current across the junction. Here, we demonstrate the reproducible tunneling electroresistance effect using a combination of Piezoresponse Force Microscopy (PFM) and Conducting Atomic Force Microscopy (C-AFM) techniques on nanometer-thick epitaxial BaTiO3 single crystal thin films on SrRuO3 bottom electrodes. Correlation between ferroelectric and electronic transport properties is established by the direct nanoscale visualization and control of polarization and tunneling current in BaTiO3 films. The obtained results show a change in resistance by about two orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are promising for employing ferroelectric tunnel junctions in non-volatile memory and logic devices, not involving charge as a state variable.Comment: 18 pages, 4 figure

Albiglutide and cardiovascular outcomes in patients with type 2 diabetes and cardiovascular disease (Harmony Outcomes): a double-blind, randomised placebo-controlled trial

Background: Glucagon-like peptide 1 receptor agonists differ in chemical structure, duration of action, and in their effects on clinical outcomes. The cardiovascular effects of once-weekly albiglutide in type 2 diabetes are unknown. We aimed to determine the safety and efficacy of albiglutide in preventing cardiovascular death, myocardial infarction, or stroke. Methods: We did a double-blind, randomised, placebo-controlled trial in 610 sites across 28 countries. We randomly assigned patients aged 40 years and older with type 2 diabetes and cardiovascular disease (at a 1:1 ratio) to groups that either received a subcutaneous injection of albiglutide (30–50 mg, based on glycaemic response and tolerability) or of a matched volume of placebo once a week, in addition to their standard care. Investigators used an interactive voice or web response system to obtain treatment assignment, and patients and all study investigators were masked to their treatment allocation. We hypothesised that albiglutide would be non-inferior to placebo for the primary outcome of the first occurrence of cardiovascular death, myocardial infarction, or stroke, which was assessed in the intention-to-treat population. If non-inferiority was confirmed by an upper limit of the 95% CI for a hazard ratio of less than 1·30, closed testing for superiority was prespecified. This study is registered with ClinicalTrials.gov, number NCT02465515. Findings: Patients were screened between July 1, 2015, and Nov 24, 2016. 10 793 patients were screened and 9463 participants were enrolled and randomly assigned to groups: 4731 patients were assigned to receive albiglutide and 4732 patients to receive placebo. On Nov 8, 2017, it was determined that 611 primary endpoints and a median follow-up of at least 1·5 years had accrued, and participants returned for a final visit and discontinuation from study treatment; the last patient visit was on March 12, 2018. These 9463 patients, the intention-to-treat population, were evaluated for a median duration of 1·6 years and were assessed for the primary outcome. The primary composite outcome occurred in 338 (7%) of 4731 patients at an incidence rate of 4·6 events per 100 person-years in the albiglutide group and in 428 (9%) of 4732 patients at an incidence rate of 5·9 events per 100 person-years in the placebo group (hazard ratio 0·78, 95% CI 0·68–0·90), which indicated that albiglutide was superior to placebo (p<0·0001 for non-inferiority; p=0·0006 for superiority). The incidence of acute pancreatitis (ten patients in the albiglutide group and seven patients in the placebo group), pancreatic cancer (six patients in the albiglutide group and five patients in the placebo group), medullary thyroid carcinoma (zero patients in both groups), and other serious adverse events did not differ between the two groups. There were three (<1%) deaths in the placebo group that were assessed by investigators, who were masked to study drug assignment, to be treatment-related and two (<1%) deaths in the albiglutide group. Interpretation: In patients with type 2 diabetes and cardiovascular disease, albiglutide was superior to placebo with respect to major adverse cardiovascular events. Evidence-based glucagon-like peptide 1 receptor agonists should therefore be considered as part of a comprehensive strategy to reduce the risk of cardiovascular events in patients with type 2 diabetes. Funding: GlaxoSmithKline