The development and investigation of special power transistors and stand equipment for its control

The power transistor keys and quick-recovering diodes have been investigated. The purpose of the work: the development of the power transistor and diode elements resistant to the effects of gamma- and neutron radiations, lower temperatures and inverse currents, the methods of parameters control and technological seasonings, creation of the complex of the check-measuring stands. The main principles of designing the quick-acting diodes and transistor keys intended for operation in the inverter circuits have been determined. The constants for degradation resulting from the gamma-quantum and neutron radiation have been specified. Developed and introduced into production have been the series of the power transistors with the high stability to the effect of the penetrating radiation. The laws of changes of the main electrical parameters after radiation have been established. The grounds for designing the special stands have been created, the methods of the check have been developed. The technology and construction of manufacture of instruments and the test stands, the methods of the check and technological seasonings can be introduced in practice. A simplified inverter electrical circuit, improvement of its reliability and capacity is being reached. The field of application: the manufacture of the power semiconductor instruments and inverters on its baseAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio

On the Selective Spectral Sensitivity of Oppositely Placed Double-Barrier Structures

The characteristics of an oppositely placed double potential barrier photodetector structure were investigated under longitudinal illumination. The functional abilities of the silicon n+-p-n+ structure were studied under longitudinal illumination. The choice of impurity concentration in the n+- and p- regions provided the difference in heights of the potential barriers near-surface, rear, and oppositely directed regions and their conjoining in the high-resistance p-base. The widths of the depletion regions of these barriers varied with a step change in the bias voltage. The redistribution of the fraction of absorption of electromagnetic waves between the barriers and the change in their contribution to the total photocurrent was investigated. In connection with this, short-wavelength (490 nm) and long-wavelength (830 nm) spectral maxima were formed. In the voltage range commensurate with the difference in the heights of the potential barriers, the inversion of the sign of the spectral photocurrent and, using the developed algorithm, the spectral distribution of the absorbed radiation intensity, were obtained. A physical explanation of these results is provided. The structure under investigation enables the selective registration of individual waves and their intensities. The results reported here enable an optimistic spectrophotometric outlook for oppositely placed double-barrier photonic structures