Electronic properties and phase transitions in low-dimensional semiconductors

We present the first review of the current state of the literature on electronic properties and phase transitions in TlX and TlMX2 (M = Ga, In; X = Se, S, Te) compounds. These chalcogenides belong to a family of the low-dimensional semiconductors possessing chain or layered structure. They are of significant interest because of their highly anisotropic properties, semi- and photoconductivity, non-linear effects in their I-V characteristics (including a region of negative differential resistance), switching and memory effects, second harmonic optical generation, relaxor behavior and potential applications for optoelectronic devices. We review the crystal structure of TlX and TlMX2 compounds, their transport properties under ambient conditions, experimental and theoretical studies of the electronic structure, transport properties and semiconductor-metal phase transitions under high pressure, and sequences of temperature-induced structural phase transitions with intermediate incommensurate states. Electronic nature of the ferroelectric phase transitions in the above-mentioned compounds, as well as relaxor behavior, nanodomains and possible occurrence of quantum dots in doped and irradiated crystals is discussed.Comment: 70 pages, 38 figure

125Te NMR tomography of [Re6] cluster in Re6Te15 and related cluster compounds

The static and magic angle spinning NMR solid-state spectra of Re6Te15 and a series of Re6-Te cluster compounds demonstrate the positive and negative 125Te NMR chemical shifts indicating that the [Re6] cluster distorts strongly magnetic field at the neighboring Te sites. The local magnetic field is decreased at the facial tellurium sites (Teface) and enhanced at the apexial tellurium sites (Teapex). The facial and sagittal sections of the Re6-Te clusters were reconstructed from analysis of Teface and Teapex NMR spectra, respectively.NRC publication: Ye