Charged excitons and biexcitons in laterally coupled InGaAs quantum dots

We present results of atomistic empirical pseudopotential calculations and configuration interaction for excitons, positive and negative trions (X\pm), positive and negative quartons (X2\pm) and biexcitons. The structure investigated are laterally aligned InGaAs quantum dot molecules embedded in GaAs under a lateral electric field. The rather simple energetic of excitons becomes more complex in the case of charged quasiparticles but remains tractable. The negative trion spectrum shows four anticrossings in the presently available range of fields while the positive trion shows two. The magnitude of the anticrossings reveals many-body effects in the carrier tunneling process that should be experimentally accessible.Comment: 9 Pages, 9 Figures, 3 Pages. High quality figures at http://www.fkf.mpg.de/bester/publications.htm

Effects of charged defects on the electronic and optical properties of self-assembled quantum dots

We investigate the effects of point charge defects on the single particle electronic structure, emission energies, fine structure splitting and oscillator strengths of excitonic transitions in strained In$_{0.6}$Ga$_{0.4}$As/GaAs and strain-free GaAs/Al$_{0.3}$Ga$_{0.7}$As quantum dots. We find that the charged defects significantly modify the single particle electronic structure and excitonic spectra in both strained and strain-free structures. However, the excitonic fine structure splitting, polarization anisotropy and polarization direction in strained quantum dots remain nearly unaffected, while significant changes are observed for strain-free quantum dots.Comment: Submitted to PR

Asymmetry in self-assembled quantum dot-molecules made of identical InAs/GaAs quantum dots

We show that a diatomic dot molecule made of two identical, vertically stacked, strained InAs/GaAs self-assembled dots exhibits an asymmetry in its single-particle and may-particle wavefunctions. The single-particle wave function is asymmetric due to the inhomogeneous strain, while the asymmetry of the many-particle wavefunctions is caused by the correlation induced localization: the lowest singlet $^1\Sigma_g$ and triplet $^3\Sigma$ states show that the two electrons are each localized on different dots within the molecule, for the next singlet states $^1\Sigma_u$ both electrons are localized on the same (bottom) dot for interdot separation $d>$ 8 nm. The singlet-triplet splitting is found to be $\sim 0.1$ meV at inter-dot separation $d$=9 nm and as large as 100 meV for $d$=4 nm, orders of magnitude larger than the few meV found in the large (50 - 100 nm) electrostatically confined dots

Ab-initio investigation of the covalent bond energies in the metallic covalent superconductor MgB2 and in AlB2

The contributions of the covalent bond energies of various atom pairs to the cohesive energy of MgB2 and AlB2 are analysed with a variant of our recently developed energy-partitioning scheme for the density-functional total energy. The covalent bond energies are strongest for the intralayer B-B pairs. In contrast to the general belief, there is also a considerable covalent bonding between the layers, mediated by the metal atom. The bond energies between the various atom pairs are analysed in terms of orbital- and energy-resolved contributions.Comment: 6 pages, 1 figure, 2 tables, submitted to PR