Custom silicon technology for SPAD-arrays with red-enhanced sensitivity and low timing jitter

Single-photon detection is an invaluable tool for many applications ranging from basic research to consumer electronics. In this respect, the Single Photon Avalanche Diode (SPAD) plays a key role in enabling a broad diffusion of these techniques thanks to its remarkable performance, room-temperature operation, and scalability. In this paper we present a silicon technology that allows the fabrication of SPAD-arrays with an unprecedented combination of low timing jitter (95 ps FWHM) and high detection efficiency at red and near infrared wavelengths (peak of 70% at 650 nm, 45% at 800 nm). We discuss the device structure, the fabrication process, and we present a thorough experimental characterization of the fabricated detectors. We think that these long-awaited results can pave the way to new exciting developments in many fields, ranging from quantum optics to single molecule spectroscop

Timing measurements with silicon single photon avalanche diodes: principles and perspectives [Invited]

Picosecond timing of single photons has laid the foundation of a great variety of applications, from life sciences to quantum communication, thanks to the combination of ultimate sensitivity with a bandwidth that cannot be reached by analog recording techniques. Nowadays, more and more applications could still be enabled or advanced by progress in the available instrumentation, resulting in a steadily increasing research interest in this field. In this scenario, single-photon avalanche diodes (SPADs) have gained a key position, thanks to the remarkable precision they are able to provide, along with other key advantages like ruggedness, compactness, large signal amplitude, and room temperature operation, which neatly distinguish them from other solutions like superconducting nanowire single-photon detectors and silicon photomultipliers. With this work, we aim at filling a gap in the literature by providing a thorough discussion of the main design rules and tradeoffs for silicon SPADs and the electronics employed along them to achieve high timing precision. In the end, we conclude with our outlook on the future by summarizing new routes that could benefit from present and prospective timing features of silicon SPADs

Two-photon interference using background-free quantum frequency conversion of single photons from a semiconductor quantum dot

We show that quantum frequency conversion (QFC) can overcome the spectral distinguishability common to inhomogeneously broadened solid-state quantum emitters. QFC is implemented by combining single photons from an InAs quantum dot (QD) at 980 nm with a 1550 nm pump laser in a periodically-poled lithium niobate (PPLN) waveguide to generate photons at 600 nm with a signal-to-background ratio exceeding 100:1. Photon correlation and two-photon interference measurements confirm that both the single photon character and wavepacket interference of individual QD states are preserved during frequency conversion. Finally, we convert two spectrally separate QD transitions to the same wavelength in a single PPLN waveguide and show that the resulting field exhibits non-classical two-photon interference.Comment: Supercedes arXiv:1205.221

Double-Terminal Quenching Topology for Threefold After-Pulsing Reduction: Model and Experimental Validation

Single-Photon Avalanche Diodes (SPADs) have emerged as crucial devices across a multitude of applications, ranging from Fluorescence Lifetime Imaging (FLIM) to Quantum technologies and LiDAR systems. The increasing demand of fastening the acquisition rate of these application has spurred significant interest in minimizing the SPAD dead-time to a few nanoseconds. However, attempts to minimize its duration often exacerbate the after-pulsing phenomenon, posing a significant challenge in optimizing system performance. In this paper, we propose a novel strategy to address this trade-off. We introduce a method that exploits passive or active quenching at the cathode terminal of SPADs, combined with an Active Quenching Circuit at the anode node. This combined approach aims at mitigating after-pulsing effects while simultaneously minimizing dead time. We developed a comprehensive model and validation methodology to rigorously evaluate the effectiveness of this strategy. Finally, we demonstrate how it is possible to achieve a strong reduction in after-pulsing compared to standard approaches

Recent advances and future perspectives of single-photon avalanche diodes for quantum photonics applications

Photonic quantum technologies promise a revolution of the world of information processing, from simulation and computing to communication and sensing, thanks to the many advantages of exploiting single photons as quantum information carriers. In this scenario, single-photon detectors play a key role. On the one hand, superconducting nanowire single-photon detectors (SNSPDs) are able to provide remarkable performance on a broad spectral range, but their applicability is often limited by the need of cryogenic operating temperatures. On the other hand, single-photon avalanche diodes (SPADs) overcome the intrinsic limitations of SNSPDs by providing a valid alternative at room temperature or slightly below. In this paper, we review the fundamental principles of the SPAD operation and we provide a thorough discussion of the recent progress made in this field, comparing the performance of these devices with the requirements of the quantum photonics applications. In the end, we conclude with our vision of the future by summarizing prospects and unbeaten paths that can open new perspectives in the field of photonic quantum information processing

Observation of strongly entangled photon pairs from a nanowire quantum dot

A bright photon source that combines high-fidelity entanglement, on-demand generation, high extraction efficiency, directional and coherent emission, as well as position control at the nanoscale is required for implementing ambitious schemes in quantum information processing, such as that of a quantum repeater. Still, all of these properties have not yet been achieved in a single device. Semiconductor quantum dots embedded in nanowire waveguides potentially satisfy all of these requirements; however, although theoretically predicted, entanglement has not yet been demonstrated for a nanowire quantum dot. Here, we demonstrate a bright and coherent source of strongly entangled photon pairs from a position controlled nanowire quantum dot with a fidelity as high as 0.859 +/- 0.006 and concurrence of 0.80 +/- 0.02. The two-photon quantum state is modified via the nanowire shape. Our new nanoscale entangled photon source can be integrated at desired positions in a quantum photonic circuit, single electron devices and light emitting diodes.Comment: Article and Supplementary Information with open access published at: http://www.nature.com/ncomms/2014/141031/ncomms6298/full/ncomms6298.htm

High-voltage integrated active quenching circuit for single photon count rate up to 80 Mcounts/s

Single photon avalanche diodes (SPADs) have been subject to a fast improvement in recent years. In particular, custom technologies specifically developed to fabricate SPAD devices give the designer the freedom to pursue the best detector performance required by applications. A significant breakthrough in this field is represented by the recent introduction of a red enhanced SPAD (RE-SPAD) technology, capable of attaining a good photon detection efficiency in the near infrared range (e.g. 40% at a wavelength of 800 nm) while maintaining a remarkable timing resolution of about 100ps full width at half maximum. Being planar, the RE-SPAD custom technology opened the way to the development of SPAD arrays particularly suited for demanding applications in the field of life sciences. However, to achieve such excellent performance custom SPAD detectors must be operated with an external active quenching circuit (AQC) designed on purpose. Next steps toward the development of compact and practical multichannel systems will require a new generation of monolithically integrated AQC arrays. In this paper we present a new, fully integrated AQC fabricated in a high-voltage 0.18 µm CMOS technology able to provide quenching pulses up to 50 Volts with fast leading and trailing edges. Although specifically designed for optimal operation of RE-SPAD devices, the new AQC is quite versatile: it can be used with any SPAD detector, regardless its fabrication technology, reaching remarkable count rates up to 80 Mcounts/s and generating a photon detection pulse with a timing jitter as low as 119 ps full width at half maximum. The compact design of our circuit has been specifically laid out to make this IC a suitable building block for monolithically integrated AQC arrays

A physically based model for evaluating the Photon DetectionEfficiency and the Temporal Response of SPAD detectors

We present a physically-based model aimed at calculating the Photon Detection Efficiency (PDE) and the temporal response of a Single-Photon Avalanche Diode (SPAD) with a given structure. A comparison between simulation and experimental results is also reported in order to confirm the model accuracy

Note: Fully integrated active quenching circuit achieving 100 MHz count rate with custom technology single photon avalanche diodes

The minimization of Single Photon Avalanche Diodes (SPADs) dead time is a key factor to speed up photon counting and timing measurements. We present a fully integrated Active Quenching Circuit (AQC) able to provide a count rate as high as 100 MHz with custom technology SPAD detectors. The AQC can also operate the new red enhanced SPAD and provide the timing information with a timing jitter Full Width at Half Maximum (FWHM) as low as 160 ps

SPAD array detectors for parallel photon timing applications

Over the past few years there has been a growing interest in monolithic arrays of single photon avalanche diodes (SPAD) for spatially resolved detection of faint ultrafast optical signals. SPADs implemented in CMOS-compatible planar technologies offer the typical advantages of microelectronic devices (small size, ruggedness, low voltage, low power, etc.). Furthermore, they have inherently higher photon detection efficiency than PMTs and are able to provide, beside sensitivities down to single-photons, very high acquisition speeds. In order to make SPAD array more and more competitive in time-resolved application it is necessary to face problems like electrical crosstalk between adjacent pixels