Single Crystal Diamond Needle as Point Electron Source

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2–0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics

Electron field emission properties of carbon nanoflakes prepared by RF sputtering

[[abstract]]Carbon nanoflakes (CNFs) with corrugated geometry were synthesized using RF sputtering process with Ar/CH4 gas mixture. Transmission electron microscopic examination reveals that the introduction of H2 in sputtering chamber leads to the preferential etching of amorphous carbons, while maintaining integrity for the nano-crystalline phases. The proportion of nano-sized crystalline clusters is thus increased, which improved the electron field emission (EFE) properties of the materials, viz. with turn-on field of E0 = 6.22 V/μm and FEE current density of Je = 90.1 μA/cm2 at 11.0 V/μm. The cathodes made of screen printing of CNFs-Ag paste exhibit even better EFE properties than the as-deposited CNFs. The EFE of the CNFs cathodes can be turned on at E0 = 5.71 V/μm, achieving J0 = 340.1 μA/cm2 at 11.0 V/μm applied field. These results showed that the CNFs are inheritantly more robust in device fabrication process than the other carbon materials and thus possess better potential for electron field emitter applications.[[notice]]補正完畢[[journaltype]]國外[[incitationindex]]SC

Renewing the Mainstream Theory of Field and Thermal Electron Emission

Mainstream field electron emission (FE) theory—the theory normally used by FE experimentalists—employs a Sommerfeld-type free-electron model to describe FE from a metal emitter with a smooth planar surface of very large extent. This chapter reviews the present state of mainstream FE theory, noting aspects of the history of FE and thermal electron emission theory. It sets out ways of improving the theory’s presentation, with the ultimate aim of making it easier to reliably compare theory and experiment. This includes distinguishing between (a) emission theory and (b) device/system theory (which deals with field emitter behaviour in electrical circuits), and between ideal and non-ideal device behaviours. The main focus is the emission theory. Transmission regimes and emission current density regimes are discussed. With FE, a method of classifying different FE equations is outlined. With theories that assume tunnelling through a Schottky-Nordheim (SN) (“planar-image-rounded”) barrier, a careful distinction is needed between the barrier form correction factor ν (“nu”) and the special mathematical function v (“vee”). This function v is presented as dependent on the Gauss variable x. The pure mathematics of v(x) is summarised, and reasons are given for preferring the use of x over the older convention of using the Nordheim parameter y [=+√x]. It is shown how the mathematics of v(x) is applied to wave-mechanical transmission theory for basic Laurent-form barriers (which include the SN barrier). A brief overview of FE device/system theory defines and discusses different auxiliary parameters currently in use, outlines a preferred method for characterising ideal devices when using FN plots and notes difficulties in characterising non-ideal devices. The chapter concludes by listing some of the future tasks involved in upgrading FE science