10 research outputs found

    Electron spin coherence exceeding seconds in high purity silicon

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    Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors, and the availability of an isotopically-purified 28^{28}Si form with no magnetic nuclei overcomes what is a main source of spin decoherence in many other materials. Nevertheless, the coherence lifetimes of electron spins in the solid state have typically remained several orders of magnitude lower than what can be achieved in isolated high-vacuum systems such as trapped ions. Here we examine electron spin coherence of donors in very pure 28^{28}Si material, with a residual 29^{29}Si concentration of less than 50 ppm and donor densities of 1014−1510^{14-15} per cm3^3. We elucidate three separate mechanisms for spin decoherence, active at different temperatures, and extract a coherence lifetime T2T_2 up to 2 seconds. In this regime, we find the electron spin is sensitive to interactions with other donor electron spins separated by ~200 nm. We apply a magnetic field gradient in order to suppress such interactions and obtain an extrapolated electron spin T2T_2 of 10 seconds at 1.8 K. These coherence lifetimes are without peer in the solid state by several orders of magnitude and comparable with high-vacuum qubits, making electron spins of donors in silicon ideal components of a quantum computer, or quantum memories for systems such as superconducting qubits.Comment: 18 pages, 4 figures, supplementary informatio

    Relaxation Times of Organic Radicals and Transition Metal Ions

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    Compounds of Nitrogen with Hydrogen

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