Optoelectronic monolithic integration of waveguided Metal-Germanium-Metal Photodetector and Ge CMOSFETs on SOI wafer

10.1149/1.3487588ECS Transactions336573-57

Inward particle transport at high collisionality in the EAST tokamak

We have simulated two discharges in the tokamak EAST at ASIPP, Hefei. Particular focus has been put on the particle transport since EAST has a peaked density profile with only edge fuelling. The turbulent particle pinch has not been assumed to be strong in such strongly collisional plasmas as that in EAST. However, as it turned out, there is an increase in the particle pinch for high collisionality in our model. This was verified by turning collisions on and off in the simulations. Overall good agreement was found

Tensile-strained germanium CMOS integration on silicon

10.1109/LED.2007.909836IEEE Electron Device Letters28121117-1119EDLE

Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition

10.1109/LED.2009.2029125IEEE Electron Device Letters30101066-1068EDLE

Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices

10.1149/1.2727393ECS Transactions61105-11

Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism

10.1063/1.2841061Applied Physics Letters925-APPL

Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier

10.1109/LED.2007.914095IEEE Electron Device Letters292161-164EDLE

Low-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguide

10.1109/LPT.2008.928087IEEE Photonics Technology Letters20171485-1487IPTL

Integration of tensile-strained Ge p-i-n photodetector on advanced CMOS platform

IEEE International Conference on Group IV Photonics GFP52-5