18 research outputs found
Emission spectra of terahertz quantum cascade laser
We calculated energy levels, wave functions, and energies of radiative transitions in terahertz
quantum cascade lasers based on GaAs/Al0.15Ga0.85As heterostructures. Current-voltage characteristics
and current dependences of laser radiation intensity were measured, and the maximum
operating temperatures reaching 85 K were determined. Radiation spectra of quantum cascade
lasers were measured for different temperatures, and the effect of intensity “pumping” from lowfrequency
modes to high-frequency modes was found to happen in the case of an increase in the
current and time delay of the signal capture, which is explained by heating of the sample during
a pulse of the current. Application of the lasers for registration of impurity photoconductivity
signals in semiconductor heterostructures was demonstrated
Study of methods for lowering the lasing frequency of a terahertz quantum-cascade laser based on two quantum wells
Two mechanisms for achieving lower terahertz range frequencies in quantum cascade structures
with two quantum wells based on GaAs/AlGaAs compounds are proposed. The first mechanism is based on
the introduction of composite quantum wells consisting of a narrow (~2 nm) quantum well with a low potential barrier, being within the main wide quantum well. The second mechanism is based on barriers with
unequal heights, arranged in front of and behind the composite quantum well. Optimized quantum cascade laser structures emitting in the regions of ~2.15 and ~1.35 THz are calculated
Study of methods for lowering the lasing frequency of a terahertz quantum-cascade laser based on two quantum wells
Two mechanisms for achieving lower terahertz range frequencies in quantum cascade structures
with two quantum wells based on GaAs/AlGaAs compounds are proposed. The first mechanism is based on
the introduction of composite quantum wells consisting of a narrow (~2 nm) quantum well with a low potential barrier, being within the main wide quantum well. The second mechanism is based on barriers with
unequal heights, arranged in front of and behind the composite quantum well. Optimized quantum cascade laser structures emitting in the regions of ~2.15 and ~1.35 THz are calculated
Rashba spin splitting and exchange enhancement of the g factor in InAs/AlSb heterostructures with a two-dimensional electron gas
International audienc
Molecular Beam Epitaxy of Si–Ge–Sn Heterostructures for Monolithically Integrated Optoelectronic Devices Based on Silicon
Cyclotron resonance stydy in InAs/AlSb quantum well heterostructures with two occupied electronic subbands
International audienc