2 research outputs found
Experimental study of the electrical properties of copper nitride thin films prepared by dc magnetron sputtering
In this work the main effective parameters on the electrical resistivity of
copper nitride thin films are investigated. Copper nitride thin films were
successfully deposited on glass substrates by reactive dc magnetron
sputtering at room temperature but different sputtering time. Working gas
was a mixture of argon and nitrogen with equal amounts. The effect of
deposition time on the structural, optical and electrical properties of
deposited films was investigated. X-ray diffraction measurements show
different lattice orientation in the structure of deposited films. By
increasing the time of sputtering an orientation change from (100) to (111)
can be observed in the films. Film morphology of samples is not changed with
the sputtering time. The optical transmittance of deposited films decreases
with increasing the deposition time. Results confirm that when the amount of
nitrogen in working gas is 50%, we have more (100) planes in the
structure of the deposited films, leads to higher resistivity of the films