Experimental study of negative photoconductivity in n-PbTe(Ga) epitaxial films

We report on low-temperature photoconductivity (PC) in n-PbTe(Ga) epitaxial films prepared by the hot-wall technique on -BaF_2 substrates. Variation of the substrate temperature allowed us to change the resistivity of the films from 10^8 down to 10_{-2} Ohm x cm at 4.2 K. The resistivity reduction is associated with a slight excess of Ga concentration, disturbing the Fermi level pinning within the energy gap of n-PbTe(Ga). PC has been measured under continuous and pulse illumination in the temperature range 4.2-300 K. For films of low resistivity, the photoresponse is composed of negative and positive parts. Recombination processes for both effects are characterized by nonexponential kinetics depending on the illumination pulse duration and intensity. Analysis of the PC transient proves that the negative photoconductivity cannot be explained in terms of nonequilibrium charge carriers spatial separation of due to band modulation. Experimental results are interpreted assuming the mixed valence of Ga in lead telluride and the formation of centers with a negative correlation energy. Specifics of the PC process is determined by the energy levels attributed to donor Ga III, acceptor Ga I, and neutral Ga II states with respect to the crystal surrounding. The energy level corresponding to the metastable state Ga II is supposed to occur above the conduction band bottom, providing fast recombination rates for the negative PC. The superposition of negative and positive PC is considered to be dependent on the ratio of the densities of states corresponding to the donor and acceptor impurity centers.Comment: 7 pages, 4 figure

Indium Doping of CdTe Grown by Molecular Beam Epitaxy

We report on n-type indium doping of CdTe films grown by molecular beam epitaxy on (001) GaAs substrates. By adjusting the flux of In atoms we can precisely control the carrier concentration over three orders of magnitude - from 8 × 10$\text{}^{14}$ up to 1.3 × 10$\text{}^{18}$ cm$\text{}^{-3}$. In agreement with earlier reports we confirmed that Cd overpressure plays an important role in the doping process. The doping appears to be most effective for Cd/Te pressure ratio of 1.5. For this value of Cd/Te pressure ratio essentially 100% efficiency of doping is achieved at low In concentrations (< 10$\text{}^{18}$ cm$\text{}^{-3}$). At higher In concentrations acceptor impurities compensate shallow donors limiting the concentration of free carriers

Coincidence resolution time of two small scintillators coupled to high quantum-efficiency photomultipliers in a PET-like system

The lower limit of the time resolution for a positron emission tomography (PET) system has been measured for two scintillator types, LYSO:Ce and LuAG:Pr. Small dimension crystals and ultra bi-alkali phototubes have been used in order to increase the detected scintillation photons. Good timing resolutions of 118 ps and 223 ps FWHM have been obtained for two LYSO and two LuAG, respectively, exposed to a 22Na source

MCORD - MPD Cosmic Ray Detector a new features

The main detector system at the Nuclotron-based Ion Collider fAcility (NICA) located in Dubna, Russia is the Multi-Purpose Detector (MPD). For better calibration reason, the MPD needs an additional trigger system for an off-beam calibration of MPD sub-detectors and for rejection (veto) of cosmic muons. The system should also be useful for practical astrophysics observations of cosmic showers. The consortium NICA-PL group defines goals and basic assumptions for the MPD Cosmic Ray Detector (MCORD). This article describes the conceptual design and simulation plans of the MCORD detector based on plastic scintillators with SiPM photodetectors and electronic digital system based on the MicroTCA crate