39 research outputs found
Analytical approximation for perturbation of MOSFET surface potential by polysilicon depletion layer
Closed-form approximation for the perturbation of MOSFET surface potential by quantum-mechanical effects
Technical Note PR-TN 2006/00302 Issued: 04/2006
From BSIM3/4 to PSP Translation of flicker noise and junction parameters The PSP model is a joint development of The Pennsylvania State University and Philips Research A.J. Scholten; G.D.J. Smit; R. van Langevelde; D.B.M. Klaassen