259 research outputs found
Interplay between the electrical transport properties of GeMn thin films and Ge substrates
We present evidence that electrical transport studies of epitaxial p-type
GeMn thin films fabricated on high resistivity Ge substrates are severely
influenced by parallel conduction through the substrate, related to the large
intrinsic conductivity of Ge due to its small bandgap. Anomalous Hall
measurements and large magneto resistance effects are completely understood by
taking a dominating substrate contribution as well as the measurement geometry
into account. It is shown that substrate conduction persists also for well
conducting, degenerate, p-type thin films, giving rise to an effective
two-layer conduction scheme. Using n-type Ge substrates, parallel conduction
through the substrate can be reduced for the p-type epi-layers, as a
consequence of the emerging pn-interface junction. GeMn thin films fabricated
on these substrates exhibit a negligible magneto resistance effect. Our study
underlines the importance of a thorough characterization and understanding of
possible substrate contributions for electrical transport studies of GeMn thin
films.Comment: 9 pages, 9 figure
Clustering in a precipitate free GeMn magnetic semiconductor
We present the first study relating structural parameters of precipitate free
Ge0.95Mn0.05 films to magnetisation data. Nanometer sized clusters - areas with
increased Mn content on substitutional lattice sites compared to the host
matrix - are detected in transmission electron microscopy (TEM) analysis. The
films show no overall spontaneous magnetisation at all down to 2K. The TEM and
magnetisation results are interpreted in terms of an assembly of
superparamagnetic moments developing in the dense distribution of clusters.
Each cluster individually turns ferromagnetic below an ordering temperature
which depends on its volume and Mn content.Comment: accepted for publication in Phys. Rev. Lett. (2006). High resolution
images ibide
Enhanced photoluminescence emission from two-dimensional silicon photonic crystal nanocavities
We present a temperature dependent photoluminescence study of silicon optical
nanocavities formed by introducing point defects into two-dimensional photonic
crystals. In addition to the prominent TO phonon assisted transition from
crystalline silicon at ~1.10 eV we observe a broad defect band luminescence
from ~1.05-1.09 eV. Spatially resolved spectroscopy demonstrates that this
defect band is present only in the region where air-holes have been etched
during the fabrication process. Detectable emission from the cavity mode
persists up to room-temperature, in strong contrast the background emission
vanishes for T > 150 K. An Ahrrenius type analysis of the temperature
dependence of the luminescence signal recorded either in-resonance with the
cavity mode, or weakly detuned, suggests that the higher temperature stability
may arise from an enhanced internal quantum efficiency due to the
Purcell-effect
A Correlation between the Emission Intensity of Self-Assembled Germanium Islands and the Quality Factor of Silicon Photonic Crystal Nanocavities
We present a comparative micro-photoluminescence study of the emission
intensity of self-assembled germanium islands coupled to the resonator mode of
two-dimensional silicon photonic crystal defect nanocavities. The emission
intensity is investigated for cavity modes of L3 and Hexapole cavities with
different cavity quality factors. For each of these cavities many nominally
identical samples are probed to obtain reliable statistics. As the quality
factor increases we observe a clear decrease in the average mode emission
intensity recorded under comparable optical pumping conditions. This clear
experimentally observed trend is compared with simulations based on a
dissipative master equation approach that describes a cavity weakly coupled to
an ensemble of emitters. We obtain evidence that reabsorption of photons
emitted into the cavity mode is responsible for the observed trend. In
combination with the observation of cavity linewidth broadening in power
dependent measurements, we conclude that free carrier absorption is the
limiting effect for the cavity mediated light enhancement under conditions of
strong pumping.Comment: 8 pages, 5 figure
Magnetic and structural properties of GeMn films: precipitation of intermetallic nanomagnets
We present a comprehensive study relating the nanostructure of Ge_0.95Mn_0.05
films to their magnetic properties. The formation of ferromagnetic nanometer
sized inclusions in a defect free Ge matrix fabricated by low temperature
molecular beam epitaxy is observed down to substrate temperatures T_S as low as
70 deg. Celsius. A combined transmission electron microscopy (TEM) and electron
energy-loss spectroscopy (EELS) analysis of the films identifies the inclusions
as precipitates of the ferromagnetic compound Mn_5Ge_3. The volume and amount
of these precipitates decreases with decreasing T_S. Magnetometry of the films
containing precipitates reveals distinct temperature ranges: Between the
characteristic ferromagnetic transition temperature of Mn_5Ge_3 at
approximately room temperature and a lower, T_S dependent blocking temperature
T_B the magnetic properties are dominated by superparamagnetism of the Mn_5Ge_3
precipitates. Below T_B, the magnetic signature of ferromagnetic precipitates
with blocked magnetic moments is observed. At the lowest temperatures, the
films show features characteristic for a metastable state.Comment: accepted for publication in Phys. Rev. B 74 (01.12.2006). High
resolution images ibide
Quantum Hall Resistance Overshoot in 2-Dimensional Electron Gases - Theory and Experiment
We present a systematical experimental investigation of an unusual transport
phenomenon observed in two dimensional electron gases in Si/SiGe
heterostructures under integer quantum Hall effect (IQHE) conditions. This
phenomenon emerges under specific experimental conditions and in different
material systems. It is commonly referred to as Hall resistance overshoot,
however, lacks a consistent explanation so far. Based on our experimental
findings we are able to develop a model that accounts for all of our
observations in the framework of a screening theory for the IQHE. Within this
model the origin of the overshoot is attributed to a transport regime where
current is confined to co-existing evanescent incompressible strips of
different filling factors.Comment: 26 pages, 10 figure
Inelastic light scattering by intrasubband spin-density excitations in GaAs-AlGaAs quantum wells with balanced Bychkov-Rashba and Dresselhaus spin-orbit interaction: Quantitative determination of the spin-orbit field
Inelastic light scattering experiments on low-energy intrasubband spin-density excitations (SDEs) are performed in (001)-grown modulation-doped GaAs-AlGaAs single quantum wells in in-plane external magnetic fields. The investigated samples possess balanced linear Bychkov-Rashba (alpha) and Dresselhaus (beta) spin-orbit strengths in two different configurations, alpha = beta and alpha = -beta Both configurations lead to an extreme anisotropy of the spin splitting of the conduction band, where the in-plane directions of maximum spin splitting for both configurations are perpendicular to each other. The spin splitting asymmetry can be directly detected via the SDE by breaking of the time-reversal symmetry due to transfer of a momentum q in the quantum-well plane. In addition, the application of an in-plane magnetic field B-ext perpendicular to q allows us to modulate the effective magnetic field. Via a numerical line-shape analysis of the experimental SDE spectra, we determine the relevant parameters of the samples. We find that the linear spin-orbit strength vertical bar alpha vertical bar = beta is comparable for both samples, while the electron g factors are markedly different. Furthermore, we experimentally quantify the values of the maximum internal spin-orbit fields, which are as high as B-so similar to 18 T for both samples
A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure
We report on the realization and top-gating of a two-dimensional electron
system in a nuclear spin free environment using 28Si and 70Ge source material
in molecular beam epitaxy. Electron spin decoherence is expected to be
minimized in nuclear spin-free materials, making them promising hosts for
solid-state based quantum information processing devices. The two-dimensional
electron system exhibits a mobility of 18000 cm2/Vs at a sheet carrier density
of 4.6E11 cm-2 at low temperatures. Feasibility of reliable gating is
demonstrated by transport through split-gate structures realized with palladium
Schottky top-gates which effectively control the two-dimensional electron
system underneath. Our work forms the basis for the realization of an
electrostatically defined quantum dot in a nuclear spin free environment.Comment: 8 pages, 3 figure
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