Britain welcomes the world: Dressing up London

Copyright @ 2013 Routledgehttps://www.taylorfrancis.com/chapters/dressing-london-ozlem-edizel-graeme-evans-hua-dong/e/10.4324/9780203126486-9?context=ubx&refId=546b057b-44c2-4d37-91ac-982df6ff2fa

Variance-constrained multiobjective control and filtering for nonlinear stochastic systems: A survey

The multiobjective control and filtering problems for nonlinear stochastic systems with variance constraints are surveyed. First, the concepts of nonlinear stochastic systems are recalled along with the introduction of some recent advances. Then, the covariance control theory, which serves as a practical method for multi-objective control design as well as a foundation for linear system theory, is reviewed comprehensively. The multiple design requirements frequently applied in engineering practice for the use of evaluating system performances are introduced, including robustness, reliability, and dissipativity. Several design techniques suitable for the multi-objective variance-constrained control and filtering problems for nonlinear stochastic systems are discussed. In particular, as a special case for the multi-objective design problems, the mixed H 2 / H ∞ control and filtering problems are reviewed in great detail. Subsequently, some latest results on the variance-constrained multi-objective control and filtering problems for the nonlinear stochastic systems are summarized. Finally, conclusions are drawn, and several possible future research directions are pointed out

Algebraic approach to the Hulthen potential

In this paper the energy eigenvalues and the corresponding eigenfunctions are calculated for Hulthen potential. Then we obtain the ladder operators and show that these operators satisfy SU(2) commutation relation.Comment: 8 Pages, 1 Tabl

First principles investigation of transition-metal doped group-IV semiconductors: Rx{_x}Y1−x_{1-x} (R=Cr, Mn, Fe; Y=Si, Ge)

A number of transition-metal (TM) doped group-IV semiconductors, R$_{x}$Y$_{1-x}$ (R=Cr, Mn and Fe; Y=Si, Ge), have been studied by the first principles calculations. The obtained results show that antiferromagnetic (AFM) order is energetically more favored than ferromagnetic (FM) order in Cr-doped Ge and Si with $x$=0.03125 and 0.0625. In 6.25% Fe-doped Ge, FM interaction dominates in all range of the R-R distances while for Fe-doped Ge at 3.125% and Fe-doped Si at both concentrations of 3.125% and 6.25%, only in a short R-R range can the FM states exist. In the Mn-doped case, the RKKY-like mechanism seems to be suitable for the Ge host matrix, while for the Mn-doped Si, the short-range AFM interaction competes with the long-range FM interaction. The different origin of the magnetic orders in these diluted magnetic semiconductors (DMSs) makes the microscopic mechanism of the ferromagnetism in the DMSs more complex and attractive.Comment: 14 pages, 2 figures, 6 table