Enhanced SnS phase purity of films produced by rapid thermal processing of SnS2 precursors

In this work, we present a procedure to grow single phase SnS thin films consisting on the annealing of RF magnetron sputtered SnS2 precursors . A series of samples was produced by rapid thermal processing of precursors deposited both on bare and Mo coated glass. For those samples the time at maximum temperature and heating rate were variedN/

Various routes for low temperature RFmagnetron sputtering of Indium Tin Oxide films

In this work we have studied the influence of the Ar working pressure, substrate temperature, low power plasma irradiation and partial pressure of hydrogen in the RF-magnetron sputtering of indium tin oxide (ITO) thin films on glass substrates. This work aims at identifying the best conditions to achieve good quality ITO film at low temperature. Four sets of samples were prepared which were characterized by scanning electron microscopy, X-ray diffraction (XRD), Van der Pauw, transmittance and absorbance measurementsN/

Growth and Characterization of single phase SnS thin films by sulphurization of sputtered sulphide precursors

Single-phase SnS thin films have been grown on soda-lime glass substrates based on the sulphurization of RF-magnetron sputtered SnS2 precursors. Two different approaches to sulphurization were compared and thoroughly studied. The two series of identical precursors were sulphurized in the same furnace, inside a graphite box with and without elemental sulphur evaporation. Different maximum sulphurization temperatures, in the range 300ºC to 570ºC, were tested. Sulphurization of SnS2 precursors in a graphite box with and without sulpur vapour at high temperature produces SnS films which appear to be single-phase from the structural analysis. The studies show that the direct absorption transitions of SnS are at 1.41 eV and 1.68 eV for sulphurization in graphite box with and without elemental sulphur evaporation, respectively. The indirect absorption transition values varied from 1.49 eV e 1.37 eV.N/

On the properties of Cu2ZnSn(S,Se)4 thin films prepared by selenization of binary precursors using rapid thermal processing

Cu2ZnSn(S,Se)4 thin films were grown on molybdenum coated glass substrates by selenization of stacked precursor layers of zinc, tin disulfide and copper sulfide. Selenization was performed using a rapid thermal processor at maximum temperatures in the range of 400°C to 550°C and at heating rates of 1°C/s and 2°C/s. The compositional, morphological and structural characterization of the films was carried out using energy dispersive x-ray spectroscopy, scanning electron microscopy, x-ray diffraction and Raman spectroscopy. X-ray diffraction and Raman scattering analysis suggests the formation of Cu2ZnSn(S,Se)4 only at lower temperatures, whereas Cu2ZnSnSe4 was formed at higher temperatures regardless of the heating rate used. Compositional analysis revealed that the films were Zn-poor and Sn-rich. However, the samples approach a near stoichiometric composition due to the loss of tin at a selenization temperature and heating rate of 550°C and 2°C/s, respectively. Large grains with an average lateral dimension of 4.5μm were observed for films prepared at these conditions which are very desirable for an absorber for solar cells.info:eu-repo/semantics/publishedVersio

Effect of selenization conditions on the growth and properties of Cu2ZnSn(S,Se)4 thin films

Cu2ZnSn(S,Se)4 (CZTSSe) is a potentially cost effective candidate for future thin film solar cells (TFSCs). We report the growth of CZTSSe using a hybrid process involving the sequential evaporation of Zn and sputtering of the sulfide precursors of Cu and Sn, followed by a selenization step. Two approaches for selenization were followed, one using a tubular furnace (TF) and the other using a Rapid Thermal Processor (RTP). SEM and EDS were employed to investigate the morphology and composition of the films. Structural analyses were done using XRD and Raman spectroscopy. Structural analyses revealed the formation of CZTSSe. The effects of annealing conditions on the morphological and structural properties of the films were investigated.N/

Radial abundance gradients in the outer Galactic disk as traced by main-sequence OB stars

Using a sample of 31 main-sequence OB stars located between galactocentric distances 8.4 - 15.6 kpc, we aim to probe the present-day radial abundance gradients of the Galactic disk. The analysis is based on high-resolution spectra obtained with the MIKE spectrograph on the Magellan Clay 6.5-m telescope on Las Campanas. We used a non-NLTE analysis in a self-consistent semi-automatic routine based on TLUSTY and SYNSPEC to determine atmospheric parameters and chemical abundances. Stellar parameters (effective temperature, surface gravity, projected rotational velocity, microturbulence, and macroturbulence) and silicon and oxygen abundances are presented for 28 stars located beyond 9 kpc from the Galactic centre plus three stars in the solar neighborhood. The stars of our sample are mostly on the main-sequence, with effective temperatures between 20800 - 31300 K, and surface gravities between 3.23 - 4.45 dex. The radial oxygen and silicon abundance gradients are negative and have slopes of -0.07 dex/kpc and -0.09 dex/kpc, respectively, in the region $8.4 \leq R_G \leq 15.6$\,kpc. The obtained gradients are compatible with the present-day oxygen and silicon abundances measured in the solar neighborhood and are consistent with radial metallicity gradients predicted by chemodynamical models of Galaxy Evolution for a subsample of young stars located close to the Galactic plane.Comment: Accepted for publication in the A&

Effect of rapid thermal processing conditions on the properties of Cu2ZnSnS4 thin films and solar cell performance

In the present work, we have studied the effect of several sulphurization conditions on the properties of Cu2ZnSnS4 thin films obtained through rapid thermal processing (RTP) of multi-period precursors with 8 periods of Zn/SnS2/CuS. In this study we varied the heating rate, the maximum sulphurization temperature, the time at maximum temperature and the amount of evaporated sulphur. The samples were characterized through scanning electron microscopy, energy dispersive spectroscopy, Raman scattering spectroscopy, X-ray diffraction, photoluminescence and I–V measurements. We have observed that at heating rates above 0.5 1C/s the samples delaminated severely. As a result further tests were carried out at 0.2 1C/s heating rate. The morphological studies revealed that the samples sulphurized at higher temperatures, shorter times and higher amount of evaporated sulphur exhibited larger grain sizes. The structural analysis based on Raman scattering and XRD did not lead to a clear distinction between the samples. Photoluminescence spectroscopy studies showed an asymmetric broad band characteristic of CZTS, which occurs in the range of 1.0–1.4 eV and a second band, on the high energy side of the previous one, peaking at around 1.41 eV. The intensity of this latter band varies from sample to sample revealing substantial differences in their optical properties. This band appears to originate either from the surface of the absorber or from the CdS layer and has a clear correlation with cell efficiency. The higher the intensity of this band the lower the cell efficiency, presumably due to the increase in recombination resulting from CZTS surface decomposition and eventually from the CdS with modified optoelectronic properties. The cell results hint toward a detrimental effect of long sulphuriza-tion times and a positive effect of higher sulphur vapour pressure and higher sulphurization temperature. Solar cell efficiencies improved with increased grain size in the absorber layer. The highest cell efficiency obtained in this study was 3.1%.info:eu-repo/semantics/publishedVersio

Construindo a necessária capacidade de lidar com as mudanças climáticas globais e respectivos impactos em agricultura e na alimentação.

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