Resonant States in the Electronic Structure of the High Performance Thermoelectrics AgPbmSbTe_{m}SbTe_{2+m}$ ; The Role of Ag-Sb Microstructures

Ab initio electronic structure calculations based on gradient corrected density functional theory were performed on a class of novel quaternary compounds AgPb$_{m}SbTe$_{2+m}$, which were found to be excellent high temperature thermoelctrics with large figure of merit ZT ~2.2 at 800K. We find that resonant states appear near the top of the valence and bottom of the conduction bands of bulk PbTe when Ag and Sb replace Pb. These states can be understood in terms of modified Te-Ag(Sb) bonds. Electronic structure near the gap depends sensitively on the microstructural arrangements of Ag-Sb atoms, suggesting that large ZT values may originate from the nature of these ordering arrangements.Comment: Accepted in Physical Review Letter

New Candidates for Topological Insulators : Pb-based chalcogenide series

Here, we theoretically predict that the series of Pb-based layered chalcogenides, Pb$_n$Bi$_2$Se$_{n+3}$ and Pb$_n$Sb$_2$Te$_{n+3}$, are possible new candidates for topological insulators. As $n$ increases, the phase transition from a topological insulator to a band insulator is found to occur between $n=2$ and 3 for both series. Significantly, among the new topological insulators, we found a bulk band gap of 0.40eV in PbBi$_2$Se$_4$ which is one of the largest gap topological insulators, and that Pb$_2$Sb$_2$Te$_5$ is located in the immediate vicinity of the topological phase boundary, making its topological phase easily tunable by changing external parameters such as lattice constants. Due to the three-dimensional Dirac cone at the phase boundary, massless Dirac fermions also may be easily accessible in Pb$_2$Sb$_2$Te$_5$