The Nature of Thermopower in Bipolar Semiconductors

The thermoemf in bipolar semiconductors is calculated. It is shown that it is necessary to take into account the nonequilibrium distribution of electron and hole concentrations (Fermi quasilevels of the electrons and holes). We find that electron and hole electric conductivities of contacts of semiconductor samples with connecting wires make a substantial contribution to thermoemf.Comment: 17 pages, RevTeX 3.0 macro packag

Effect of fluctuations on vortex lattice structural transitions in superconductors

The rhombic-to-square transition field $H_{\Box}(T)$ for cubic and tetragonal materials in fields along [001] is evaluated using the nonlocal London theory with account of thermal vortex fluctuations. Unlike extended Ginzburg-Landau models, our approach shows that the line $H_{\Box}(T)$ and the upper critical field $H_{c2}(T)$ do not cross due to strong fluctuations near $H_{c2}(T)$ which suppress the square anisotropy induced by the nonlocality. In increasing fields, this causes re-entrance of the rhombic structure in agreement with recent neutron scattering data on borocarbides.Comment: 4 pages, 2 figure

Quantum orbits of R-matrix type

Given a simple Lie algebra \gggg, we consider the orbits in \gggg^* which are of R-matrix type, i.e., which possess a Poisson pencil generated by the Kirillov-Kostant-Souriau bracket and the so-called R-matrix bracket. We call an algebra quantizing the latter bracket a quantum orbit of R-matrix type. We describe some orbits of this type explicitly and we construct a quantization of the whole Poisson pencil on these orbits in a similar way. The notions of q-deformed Lie brackets, braided coadjoint vector fields and tangent vector fields are discussed as well.Comment: 18 pp., Late

Analytic model for a frictional shallow-water undular bore

We use the integrable Kaup-Boussinesq shallow water system, modified by a small viscous term, to model the formation of an undular bore with a steady profile. The description is made in terms of the corresponding integrable Whitham system, also appropriately modified by friction. This is derived in Riemann variables using a modified finite-gap integration technique for the AKNS scheme. The Whitham system is then reduced to a simple first-order differential equation which is integrated numerically to obtain an asymptotic profile of the undular bore, with the local oscillatory structure described by the periodic solution of the unperturbed Kaup-Boussinesq system. This solution of the Whitham equations is shown to be consistent with certain jump conditions following directly from conservation laws for the original system. A comparison is made with the recently studied dissipationless case for the same system, where the undular bore is unsteady.Comment: 24 page

Dynamics of Macroscopic Tunneling in Elongated BEC

We investigate macroscopic tunneling from an elongated quasi 1-d trap, forming a 'cigar shaped' BEC. Using recently developed formalism we get the leading analytical approximation for the right hand side of the potential wall, i.e. outside the trap, and a formalism based on Wigner functions, for the left side of the potential wall, i.e. inside the BEC. We then present accomplished results of numerical calculations, which show a 'blip' in the particle density traveling with an asymptotic shock velocity, as resulted from previous works on a dot-like trap, but with significant differences from the latter. Inside the BEC a pattern of a traveling dispersive shock wave is revealed. In the attractive case, we find trains of bright solitons frozen near the boundary.Comment: 6 pages, 15 figure

New Mechanism of Magnetoresistance in Bulk Semiconductors: Boundary Condition Effects

We consider the electronic transport in bounded semiconductors in the presence of an external magnetic field. Taking into account appropriate boundary conditions for the current density at the contacts, a change in the magnetoresistance of bulk semiconductors is found as compared with the usual theory of galvanomagnetic effects in boundless media. New mechanism in magnetoresistance connected with the boundary conditions arises. In particular, even when the relaxation time is independent of the electron energy, magnetoresistance is not vanish.Comment: 7 pages, Elsart macro package (LaTeX2e edition