71,643 research outputs found
Giant Carrier Mobility in Single Crystals of FeSb2
We report the giant carrier mobility in single crystals of FeSb2. Nonlinear
field dependence of Hall resistivity is well described with the two-carrier
model. Maximum mobility values in high mobility band reach ~10^5 cm^2/Vs at 8
K, and are ~10^2 cm^2/Vs at the room temperature. Our results point to a class
of materials with promising potential for applications in solid state
electronics.Comment: 5 pages, 3 figures. Applied Physics Letters (in press
Multiple phase transitions in single-crystalline NaFeAs
Specific heat, resistivity, susceptibility and Hall coefficient measurements
were performed on high-quality single crystalline NaFeAs. This
compound is found to undergo three successive phase transitions at around 52,
41, and 23 K, which correspond to structural, magnetic and superconducting
transitions, respectively. The Hall effect result indicates the development of
energy gap at low temperature due to the occurrence of spin-density-wave
instability. Our results provide direct experimental evidence of the magnetic
ordering in the nearly stoichiometric NaFeAs.Comment: 4 pages, 4 figure
Is the present expansion of the universe really accelerating?
The current observations are usually explained by an accelerating expansion
of the present universe. However, with the present quality of the supernovae Ia
data, the allowed parameter space is wide enough to accommodate the
decelerating models as well. This is shown by considering a particular example
of the dark energy equation-of-state ,
which is equivalent to modifying the \emph{geometrical curvature} index of
the standard cosmology by shifting it to where is a
constant. The resulting decelerating model is consistent with the recent CMB
observations made by WMAP, as well as, with the high redshift supernovae Ia
data including SN 1997ff at . It is also consistent with the newly
discovered supernovae SN 2002dc at and SN 2002dd at which
have a general tendency to improve the fit.Comment: Replaced with the accepted version to appear in MNRA
Phonon Squeezed States Generated by Second Order Raman Scattering
We study squeezed states of phonons, which allow a reduction in the quantum
fluctuations of the atomic displacements to below the zero-point quantum noise
level of coherent phonon states. We investigate the generation of squeezed
phonon states using a second order Raman scattering process. We calculate the
expectation values and fluctuations of both the atomic displacement and the
lattice amplitude operators, as well as the effects of the phonon squeezed
states on macroscopically measurable quantities, such as changes in the
dielectric constant. These results are compared with recent experiments.Comment: 4 pages, REVTE
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